IRG4PF50WD-E [IRF]

Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN;
IRG4PF50WD-E
元器件型号: IRG4PF50WD-E
生产厂家: INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述和应用:

Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN

晶体 晶体管 功率控制 双极性晶体管 栅 局域网
PDF文件: 总8页 (文件大小:140K)
下载文档:  下载PDF数据表文档文件
型号参数:IRG4PF50WD-E参数

IRG4PF50WDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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161 IRF

IRG4PF50W-E

Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN

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1 IRF

IRG4PF50W-EPBF

Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN

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0 IRF

IRG4PF50WPBF

INSULATED GATE BIPOLAR TRANSISTOR

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144 IRF

IRG4PG40FD

Fit Rate / Equivalent Device Hours

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18 IRF

IRG4PG40KD

Fit Rate / Equivalent Device Hours

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18 IRF

IRG4PG40MD

Fit Rate / Equivalent Device Hours

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19 IRF

IRG4PG40SD

Fit Rate / Equivalent Device Hours

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12 IRF

IRG4PG40UD

Fit Rate / Equivalent Device Hours

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30 IRF

IRG4PH20

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A)

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12 IRF

IRG4PH20

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A)

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43 IRF

IRG4PH20K

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A)

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66 IRF

IRG4PH20KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A)

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84 IRF

IRG4PH20KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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22 IRF

IRG4PH20K-EPBF

Insulated Gate Bipolar Transistor, 11A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN

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0 IRF