INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A)绝缘栅双极晶体管( VCES = 1200V ,的VCE(on )典型值= 3.17V , @ VGE = 15V , IC = 5.0A )