IRGS6B60KDPBF [INFINEON]
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3;
| 型号： | IRGS6B60KDPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 晶体 晶体管 栅 |
| 文件： | 总13页 (文件大小：246K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94575A
IRGB6B60K
IRGS6B60K
IRGSL6B60K
INSULATED GATE BIPOLAR TRANSISTOR
C
VCES = 600V
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
IC = 7.0A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.8V
• Positive VCE (on) Temperature Coefficient.
G
E
n-channel
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
D2Pak
IRGS6B60K
TO-262
IRGSL6B60K
TO-220AB
IRGB6B60K
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
600
V
A
IC @ TC = 25°C
13
IC @ TC = 100°C
7.0
ICM
26
ILM
Clamped Inductive Load Current
Gate-to-Emitter Voltage
26
± 20
VGE
V
PD @ TC = 25°C
Maximum Power Dissipation
90
W
PD @ TC = 100°C Maximum Power Dissipation
36
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
°C
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
Junction-to-Case - IGBT
Min.
–––
–––
–––
–––
–––
Typ.
–––
Max.
1.4
Units
RθJC
RθCS
RθJA
RθJA
Wt
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)
Weight
0.50
–––
–––
62
°C/W
–––
40
1.44
–––
g
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1
8/18/04
IRG/B/S/SL6B60K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig.
Parameter
Collector-to-Emitter Breakdown Voltage 600 ––– –––
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.3 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-150°C)
Min. Typ. Max. Units
Conditions
V(BR)CES
VCE(on)
VGE(th)
V
VGE = 0V, IC = 500µA
5, 6,7
8,9,10
8,9,10
11
Collector-to-Emitter Saturation Voltage
1.5 1.80 2.20
––– 2.20 2.50
3.5 4.5 5.5
V
V
IC = 5.0A, VGE = 15V
C = 5.0A,VGE = 15V,
VCE = VGE, IC = 250µA
I
TJ = 150°C
Gate Threshold Voltage
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C)
gfe
Forward Transconductance
––– 3.0 –––
––– 1.0 150
––– 200 500
S
VCE = 50V, IC = 5.0A, PW=80µs
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
µA
V
GE = 0V, VCE = 600V, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
––– ––– ±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig.
Parameter
Min. Typ. Max. Units
Conditions
17
Qg
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
––– 18.2 –––
IC = 5.0A
––– 1.9 –––
––– 9.2 –––
––– 110 210
––– 135 245
––– 245 455
nC VCC = 400V
VGE = 15V
CT1
CT4
CT4
µJ
IC = 5.0A, VCC = 400V
VGE = 15V,RG = 100Ω, L =1.4mH
Ls = 150nH
TJ = 25°C
––– 25
––– 17
34
26
IC = 5.0A, VCC = 400V
VGE = 15V, RG = 100Ω L =1.4mH
Ls = 150nH, TJ = 25°C
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 215 230
––– 13.2 22
––– 150 260
––– 190 300
––– 340 560
ns
µJ
CT4
12,14
WF1WF2
13, 15
CT4
Eon
Eoff
Etot
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
IC = 5.0A, VCC = 400V
VGE = 15V,RG = 100Ω, L =1.4mH
Ls = 150nH
TJ = 150°C
––– 28
––– 17
37
26
IC = 5.0A, VCC = 400V
VGE = 15V, RG = 100Ω L =1.4mH
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 240 255
––– 18 27
ns
Ls = 150nH, TJ = 150°C
WF1
WF2
Cies
Coes
Cres
Input Capacitance
––– 290 –––
––– 34 –––
––– 10 –––
VGE = 0V
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
16
4
f = 1.0MHz
TJ = 150°C, IC = 26A, Vp =600V
RBSOA
SCSOA
Reverse Bias Safe Operting Area
Short Circuit Safe Operting Area
FULL SQUARE
10 ––– –––
R
G = 100Ω CT2
VCC = 500V, VGE =+15V to 0V,
CT3
µs
TJ = 150°C, Vp =600V, RG = 100Ω
VCC = 360V, VGE = +15V to 0V
WF3
Note to
are on page 13
2
www.irf.com
IRG/B/S/SL6B60K
15
10
5
100
90
80
70
60
50
40
30
20
10
0
0
0
20 40 60 80 100 120 140 160
(°C)
0
20 40 60 80 100 120 140 160
(°C)
T
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
100
100
10
1
10
1
10 µs
100 µs
1ms
DC
0.1
0
1
10
100
(V)
1000
10000
10
100
(V)
1000
V
V
CE
CE
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
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3
IRG/B/S/SL6B60K
20
20
18
16
14
12
10
8
18
16
14
12
10
8
V
= 18V
V
= 18V
GE
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
6
6
4
4
2
2
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
TJ = -40°C; tp = 80µs
20
18
16
14
12
10
8
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
6
4
2
0
0
1
2
3
4
5
6
V
(V)
CE
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 80µs
4
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IRG/B/S/SL6B60K
20
18
16
14
12
10
8
20
18
16
14
12
10
8
I
I
I
= 3.0A
= 5.0A
= 10A
I
I
I
= 3.0A
= 5.0A
= 10A
CE
CE
CE
CE
CE
CE
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 8 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
40
35
30
25
20
15
10
5
20
18
16
14
12
10
8
T
T
= 25°C
J
J
= 150°C
I
I
I
= 3.0A
= 5.0A
= 10A
CE
CE
CE
6
T
= 150°C
4
J
2
T
= 25°C
15
J
0
0
5
10
15
20
0
5
10
20
V
(V)
GE
V
(V)
GE
Fig. 11 - Typ. Transfer Characteristics
Fig. 10 - Typical VCE vs. VGE
VCE = 50V; tp = 10µs
TJ = 150°C
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5
IRG/B/S/SL6B60K
700
1000
100
10
600
td
OFF
500
400
300
200
100
0
E
ON
t
F
E
td
OFF
ON
R
t
1
0
5
10
(A)
15
20
0
5
10
15
20
I
C
I
(A)
C
Fig. 12 - Typ. Energy Loss vs. IC
TJ = 150°C; L=1.4mH; VCE= 400V
RG= 100Ω; VGE= 15V
Fig. 13 - Typ. Switching Time vs. IC
TJ = 150°C; L=1.4mH; VCE= 400V
RG= 100Ω; VGE= 15V
250
200
150
100
50
1000
100
10
td
OFF
E
OFF
td
E
ON
ON
t
R
t
F
1
0
0
50
100
(
150
200
0
50
100
(
150
200
R
)
R
)
Ω
Ω
G
G
Fig. 14 - Typ. Energy Loss vs. RG
TJ = 150°C; L=1.4mH; VCE= 400V
ICE= 5.0A; VGE= 15V
Fig. 15 - Typ. Switching Time vs. RG
TJ = 150°C; L=1.4mH; VCE= 400V
ICE= 5.0A; VGE= 15V
6
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IRG/B/S/SL6B60K
16
14
12
10
8
1000
100
10
Cies
300V
400V
Coes
Cres
6
4
2
0
1
0
5
10
15
20
1
10
100
Q
, Total Gate Charge (nC)
G
V
(V)
CE
Fig. 17 - Typical Gate Charge vs. VGE
Fig. 16- Typ. Capacitance vs. VCE
ICE = 5.0A; L = 600µH
VGE= 0V; f = 1MHz
10
1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
τ
J τJ
τ
τ
Cτ
0.708
0.447
0.219
0.00022
0.00089
0.01037
0.1
τ
1τ1
τ
2 τ2
3τ3
0.01
0.02
Ci= τi/Ri
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
t
, Rectangular Pulse Duration (sec)
1
Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
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7
IRG/B/S/SL6B60K
L
L
VCC
80 V
+
-
DUT
DUT
480V
0
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
diode clamp /
DUT
L
Driver
- 5V
DC
360V
DUT /
DRIVER
VCC
DUT
Rg
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
V
CC
R =
ICM
DUT
VCC
Rg
Fig.C.T.5 - Resistive Load Circuit
8
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IRG/B/S/SL6B60K
500
400
300
200
100
0
25
450
400
350
300
250
200
150
100
50
9
8
7
6
5
4
3
2
1
0
-1
20
90% ICE
15
TEST CURRENT
tf
10
90% test current
5% VCE
5% ICE
5
10% test current
tr
5% VCE
0
0
Eon Loss
Eoff Loss
-50
-100
-5
16.40
-0.20
0.30
time(µs)
0.80
16.00
16.10
16.20
16.30
time (µs)
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
500
400
300
200
100
0
50
40
VCE
ICE
30
20
10
0
-5.00
0.00
5.00
time (µS)
10.00
15.00
Fig. WF3- Typ. S.C Waveform
@ TC = 150°C using Fig. CT.3
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9
IRG/B/S/SL6B60K
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
1
2
3
1- GATE
1- GATE
2- DRAIN
2- COLLECTOR
3- EMITTER
4- COLLECTOR
3- SOURCE
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
ASS EMBLED O N WW 19, 1997
IN THE ASSEMBLY LINE "C"
INTERNATIONAL
RECTIFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DATE CODE
YEAR 7 = 1997
WEEK 19
AS S E MB L Y
LOT CODE
LINE C
10
www.irf.com
IRG/B/S/SL6B60K
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
AS S EMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
F 530S
DAT E CODE
YEAR 0 = 2000
WEEK 02
Note: "P" in assembly line
pos iti on indicates "L ead-F ree"
ASSEMBLY
LOT CODE
LINE L
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
F530S
DAT E CODE
P = DE S IGNAT E S LE AD-F RE E
PRODUCT (OPTIONAL)
YEAR 0 = 2000
AS S E MB LY
LOT CODE
WEE K 02
A = AS S E MB L Y S IT E CODE
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11
IRG/B/S/SL6B60K
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Informa-
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
AS SEMB LED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
DATE CODE
YEAR 7 = 1997
WE E K 19
Note: "P" in ass embly line
pos ition indicates "L ead-F ree"
ASSEMBLY
LOT CODE
LINE C
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
P = DE S I GNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
YEAR 7 = 1997
ASSEMBLY
LOT CODE
WEEK 19
A = AS S E MB L Y S IT E CODE
12
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IRG/B/S/SL6B60K
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
VCC= 80% (VCES), VGE =20V, L = 100µH, RG = 100Ω
This is only applied to TO-220AB package
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Energy losses include "tail" and diode reverse recovery, using Diode HF03D060ACE.
TO-220 package is not recommended for Surface Mount Application
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 08/04
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