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元器件品牌
IRHF57130
[IRF]
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39); 抗辐射功率MOSFET直通孔（ TO- 39 ）
元器件型号：
IRHF57130
生产厂家：
INTERNATIONAL RECTIFIER
描述和应用：
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
抗辐射功率MOSFET直通孔（ TO- 39 ）
晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
PDF文件：
总8页 (文件大小：116K)
下载文档：
下载PDF数据表文档文件
型号参数：IRHF57130参数
查看货源
IRHF57130PBF
暂无描述
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IRF
IRHF57130PBF
Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN
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156
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0
INFINEON
IRHF57133SE
130V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-205AF package
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12
ETC
IRHF57133SE
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
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18
IRF
IRHF57133SE
Power Field-Effect Transistor, 10.5A I(D), 130V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, LEAD FREE, HERMETIC SEALED, MODIFIED TO-39, 3 PIN
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0
IRF
IRHF57133SEPBF
Power Field-Effect Transistor, 10.5A I(D), 130V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, LEAD FREE, HERMETIC SEALED, MODIFIED TO-39, 3 PIN
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0
IRF
IRHF57214SE
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
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19
IRF
IRHF57230
RADIATION GARDENED POWER MOSFET THRU-HOLE (TO-39)
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14
IRF
IRHF57230PBF
Power Field-Effect Transistor, 7.3A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN
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0
IRF
IRHF57230SCS
Power Field-Effect Transistor, 7.3A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN
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156
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0
IRF
IRHF57230SE
RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39)
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23
IRF
IRHF57230SE
RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39)
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13
IRF
IRHF57230SEPBF
暂无描述
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156
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0
IRF
IRHF57230SESCS
Power Field-Effect Transistor, 7A I(D), 200V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN
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IRF
IRHF57230SESCSPBF
暂无描述
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IRF
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