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元器件品牌
IRHF57230SE
[IRF]
RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39); 抗辐射功率MOSFET直通孔（ TO- 39 ）
元器件型号：
IRHF57230SE
生产厂家：
INTERNATIONAL RECTIFIER
描述和应用：
RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39)
抗辐射功率MOSFET直通孔（ TO- 39 ）
晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
PDF文件：
总8页 (文件大小：130K)
下载文档：
下载PDF数据表文档文件
型号参数：IRHF57230SE参数
查看货源
IRHF57230SEPBF
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IRF
IRHF57230SESCS
Power Field-Effect Transistor, 7A I(D), 200V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN
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IRF
IRHF57230SESCSPBF
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IRF
IRHF57234SE
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
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22
IRF
IRHF57Z30
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
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15
IRF
IRHF57Z30
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | TO-39
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18
ETC
IRHF57Z30PBF
暂无描述
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IRF
IRHF57Z30SCSPBF
Power Field-Effect Transistor, 12A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN
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0
IRF
IRHF58034
60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package
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21
ETC
IRHF58034
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
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18
IRF
IRHF58034CM
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
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24
IRF
IRHF58034CMPBF
Power Field-Effect Transistor, 18A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC PACKAGE-3
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0
IRF
IRHF58130
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
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12
IRF
IRHF58130
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
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13
IRF
IRHF58130
Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN
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