IRHM4260UPBF [IRF]

Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN;
IRHM4260UPBF
型号: IRHM4260UPBF
厂家: INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述:

Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN

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文件: 总8页 (文件大小:265K)
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IRHM4450

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)

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9 IRF

IRHM450

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 11.5A I(D) | TO-254AA

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12 ETC

IRHM4Z60

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)

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9 IRF

IRHM4Z60PBF

Power Field-Effect Transistor, 35A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN

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0 IRF

IRHM53064

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-254AA

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13 ETC

IRHM53064

RADIATION HARDENED POWER MOSFET

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12 IRF

IRHM53064U

Power Field-Effect Transistor, 35A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, 3 PIN

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0 IRF

IRHM53160

RADIATION HARDENED POWER MOSFET THRU-HOLE

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19 IRF

IRHM53160D

Power Field-Effect Transistor, 35A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN

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0 IRF

IRHM53160DPBF

Power Field-Effect Transistor, 35A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN

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0 IRF

IRHM53160U

Power Field-Effect Transistor, 35A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN

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0 IRF

IRHM53160UPBF

Power Field-Effect Transistor, 35A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN

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0 IRF

IRHM53260

RADIATION HARDENED POWER MOSFET THRU-HOLE

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12 IRF

IRHM53260

RADIATION HARDENED POWER MOSFET THRU-HOLE

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21 IRF

IRHM53260

Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN

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0 INFINEON