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IRHM53064 [INFINEON]

RADIATION HARDENED POWER MOSFET; 抗辐射功率MOSFET
IRHM53064
型号: IRHM53064
厂家: Infineon    Infineon
描述:

RADIATION HARDENED POWER MOSFET
抗辐射功率MOSFET

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文件: 总8页 (文件大小:173K)
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相关型号:

IRHM53064D

Power Field-Effect Transistor, 35A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, 3 PIN

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IRHM53064DPBF

Power Field-Effect Transistor, 35A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, 3 PIN

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IRHM53064PBF

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IRHM53064U

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IRHM53260U

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暂无描述

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Power Field-Effect Transistor, 35A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, 3 PIN

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IRHM54064PBF

Power Field-Effect Transistor, 35A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3

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IRHM54064U

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