IRHM8130DPBF [INFINEON]

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IRHM8130DPBF
型号: IRHM8130DPBF
厂家: Infineon    Infineon
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晶体 晶体管 功率场效应晶体管
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RAD  
                                                                      
                                                                        
                                                                        
                                                                           
                                                                           
                                                                               
Har  
                                                                               
                                                                                 
                                                                                 
                                                                                   
                                                                                   
                                                                                    
                                                                                    
                                                                                        
H
                                                                                        
                                                                                           
EXFET  
                                                                                           
                                                                                             
                                                                                             
                                                                                               
                                                                                               
                                                                                                 
                                                                                                 
                                                                                                    
                                                                                                    
                                                                                                        
TECHNOLOGY  
                                                                                                        
                                                                                                          
                                                                                                          
                                                                                                             
                                                                                                             
                                                                                                               
                                                                                                               
                                                                                                                  
                                                                                                                  
                                                                                                                    
                                                                                                                    
                                                                                                                       
                                                                                                                       
                                                                                                                         
                                                                                                                         
                                                                                                                           
                                                                                                                           
                                                                                                                              
                                                                                                                              
                                                                                                
                                                                                                  
                                                                                                    
                                                                                                      
                                                                                                       
                                                                                                         
                                                                                                           
                                                                                                             
                                                                                                               
Absolute Maximum Ratings  
Parameter  
                                                                                                                               
                                                                                                                               
                                                                                                                                 
                                                                                                                                 
                                                                                                                                   
                                                                                                                                   
                                                                                                                                     
                                                                                                                                     
                                                                                                                                      
                                                                                                                                      
                                                                                                                                       
                                                                                                                                       
                                                                                                                                         
                                                                                                                                         
                                                                                                                                          
                                                                                                                                          
                                                                                                                                            
                                                                                                                                            
                                                                                                                                              
                                                                                                                                              
                                                                                                                                               
                                                                                                                                               
                                                                                                                                                 
                                                                                                                                                 
                                                                                                                                                  
                                                                                                                                                  
                                                                                                                                                   
                                                                                                                                                   
                                                                                                                                                     
                                                                                                                                                     
                                                                                                                               
                                                                                                                                 
                                                                                                                                   
                                                                                                                                     
                                                                                                                                      
                                                                                                                                       
                                                                                                                                         
                                                                                                                                          
                                                                                                                                            
                                                                                                                                              
                                                                                                                                               
                                                                                                                                                 
                                                                                                                                                  
                                                                                                                                                   
                                                                                                                                                     
PD - 90707D  
IRHM7130  
100V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (T0-254AA)  
®
™
d
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHM7130  
IRHM3130  
IRHM4130  
IRHM8130  
100K Rads (Si) 0.18Ω  
300K Rads (Si) 0.18Ω  
600K Rads (Si) 0.18Ω  
1000K Rads (Si) 0.18Ω  
14A  
14A  
14A  
14A  
TO-254AA  
International Rectifier’s RADHard HEXFET® technol-  
ogy provides high performance power MOSFETs for  
space applications. This technology has over a de-  
cade of proven performance and reliability in satellite  
applications. These devices have been character-  
ized for both Total Dose and Single Event Effects (SEE).  
The combination of low Rdson and low gate charge  
reduces the power losses in switching applications  
such as DC to DC converters and motor control. These  
devices retain all of the well established advantages  
of MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of elec-  
trical parameters.  
Features:  
!
!
!
!
!
!
!
!
!
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Light Weight  
Pre-Irradiation  
Units  
I
@ V  
@ V  
= 12V, T = 25°C Continuous Drain Current  
C
14  
9.0  
D
GS  
A
I
= 12V, T = 100°C Continuous Drain Current  
C
D
GS  
I
Pulsed Drain Current  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
56  
DM  
P
D
@ T = 25°C  
C
75  
W
W/°C  
V
0.60  
±20  
V
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
160  
mJ  
A
AS  
I
14  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
5.5  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
STG  
300 ( 0.063 in.(1.6mm) from case for 10s)  
9.3(Typical )  
Lead Temperature  
Weight  
g
For footnotes refer to the last page  
www.irf.com  
1
7/5/01  
            
             
                
                   
                      
                        
                          
                             
                                                                                                                              
                                                                                                                              
                                                                                                                                
                                                                                                                                
                                                                                                                                  
                                                                                                                                  
                                                                                                                                    
                                                                                                                                    
                                                                                                                                     
                                                                                                                                     
                                                                                                                                      
                                                                                                                                      
                                                                                                                                        
                                                                                                                                        
                                                                                                                                         
                                                                                                                                         
                                                                                                                                           
                                                                                                                                            
                                                                                                                                              
                                                                                                                                              
                                                                                                                                               
                                                                                                                                               
                                                                                                                                                 
                                                                                                                                                 
                                                                                                                                                  
                                                                                                                                                  
                                                                                                                                                   
                                                                                                                                                   
                                                                                                                                                     
                                                                                                                                                     
IRHM7130  
Pre-Irradiation  
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)  
Parameter  
Min Typ Max Units  
Test Conditions  
BV  
DSS  
Drain-to-Source Breakdown Voltage  
100  
—
—
—
—
V
V
= 0V, I = 1.0mA  
D
GS  
BV  
/T Temperature Coefficient of Breakdown  
0.12  
V/°C  
Reference to 25°C, I = 1.0mA  
D
DSS  
J
Voltage  
R
Static Drain-to-Source On-State  
Resistance  
—
—
—
—
—
—
—
—
0.18  
0.20  
4.0  
—
V
V
= 12V, I =9.0A  
D
= 12V, I = 14A  
DS(on)  
GS  
GS  
D
V
Gate Threshold Voltage  
Forward Transconductance  
Zero Gate Voltage Drain Current  
2.0  
3.3  
—
V
V
DS  
= V , I = 1.0mA  
D
GS(th)  
GS  
> 15V, I  
g
S ( )  
V
= 9.0A ➀  
DS  
= 80V ,V =0V  
fs  
DS  
V
I
25  
DSS  
DS GS  
µA  
—
250  
V
= 80V,  
DS  
= 0V, T = 125°C  
V
GS  
J
= 2V0V  
I
I
Gate-to-Source  
Leakage  
Forward—  
—
-100  
45  
100  
nA  
GSS  
GSS  
GS  
GS  
Gate-to-Source Leakage Reverse  
Total Gate Charge  
Gate-to-Source Charge  
Gate-to-Drain (‘Miller’) Charge  
Turn-On Delay Time  
Rise Time  
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8  
V
= -20V  
Q
Q
Q
V
=12V, I =14A  
g
gs  
gd  
d(on)  
r
GS D  
V
11  
nC  
= 50V  
DS  
17  
t
t
t
t
30  
V
= 50V, I =14A  
D
DD  
V =12V, R = 7.5Ω  
GS  
120  
49  
G
ns  
Turn-Off Delay Time  
Fall Time  
d(off)  
f
64  
L
S
+ L  
Total Inductance  
—
Measured from Drain lead (6mm /0.25in.  
from package) to Source lead (6mm /25in.  
from package) with Source wires internally  
bonded from Source Pin to Drain Pad  
D
nH  
C
Input Capacitance  
—
—
—
1100  
310  
55  
—
—
—
V
GS  
= 0V, V = 25V  
DS  
f = 1.0MHz  
iss  
C
C
Output Capacitance  
pF  
oss  
Reverse Transfer Capacitance  
rss  
Source-Drain Diode Ratings and Characteristics  
Min Typ Max Units  
Parameter  
Test Conditions  
I
I
Continuous Source Current (Body Diode)  
Pulse Source Current (Body Diode) ➀  
Diode Forward Voltage  
—
—
—
—
—
—
—
—
—
—
14  
56  
S
A
SM  
V
1.8  
370  
3.5  
V
T = 25°C, I = 14A, V  
j
= 0V ➀  
GS  
SD  
S
t
Reverse Recovery Time  
nS  
µC  
T = 25°C, I = 14A, di/dt 100A/µs  
j
F
rr  
Q
Reverse Recovery Charge  
V
DD  
50V ➀  
RR  
t
Forward Turn-On Time  
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .  
S D  
on  
Thermal Resistance  
Parameter  
Min Typ Max Units  
Test Conditions  
R
R
R
Junction-to-Case  
Junction-to-Ambient  
Case-to-Sink  
—
—
—
—
—
1.67  
48  
thJC  
thJA  
thCS  
°C/W  
0.21  
—
Typical socket mount  
Note: Corresponding Spice and Saber models are available on the G&S Website.  
For footnotes refer to the last page  
2
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Radiation Characteristics  
IRHM7130  
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.  
The hardness assurance program at International Rectifier is comprised of two radiation environments.  
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both  
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test  
conditions in order to provide a direct comparison.  
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➀  
1
2
Parameter  
100K Rads(Si)  
300 - 1000K Rads (Si) Units  
Max Min Max  
Test Conditions  
Min  
BV  
Drain-to-Source Breakdown Voltage  
Gate Threshold Voltage  
100  
2.0  
—
—
100  
1.25  
—
V
= 0V, I = 1.0mA  
GS D  
DSS  
V
V
4.0  
100  
-100  
25  
4.5  
V
= V , I = 1.0mA  
GS  
DS D  
GS(th)  
I
I
I
Gate-to-Source Leakage Forward  
Gate-to-Source Leakage Reverse  
Zero Gate Voltage Drain Current  
Static Drain-to-Source" ➀  
—
—
—
—
100  
-100  
25  
V
= 20V  
GS  
GSS  
GSS  
DSS  
nA  
—
V
= -20 V  
GS  
—
µA  
V
=80V, V  
=0V  
GS  
DS  
R
—
0.18  
0.24  
V
= 12V, I =9.0A  
D
GS  
DS(on)  
DS(on)  
SD  
On-State Resistance (TO-3)  
R
Static Drain-to-Source" ➀  
On-State Resistance (TO-254AA)  
Diode Forward Voltage" ➀  
—
—
0.18  
1.8  
—
—
0.24  
1.8  
V
GS  
= 12V, I =9.0A  
D
V
V
V
= 0V, I = 14A  
GS S  
1. Part numbers IRHM7130  
2. Part number IRHM8130, IRHM3130 and IRHM4130  
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for  
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.  
Table 2. Single Event Effect Safe Operating Area  
Ion  
LET  
2
MeV/(mg/cm ))  
Energy  
(MeV)  
285  
Range  
VDS(V)  
(µm) @VGS=0V @VGS=-5V@VGS=-10V@VGS=-15V@VGS=-20V  
Cu  
Br  
28  
43  
39  
100  
100  
100  
90  
100  
70  
80  
50  
60  
—
36.8  
305  
120  
100  
80  
60  
40  
20  
0
Cu  
Br  
0
-5  
-10  
-15  
-20  
-25  
VGS  
Fig a. Single Event Effect, Safe Operating Area  
For footnotes refer to the last page  
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3
                                                                                                                             
                                                                                                                               
                                                                                                                                  
                                                                                                                                   
                                                                                                                                     
                                                                                                                                      
                                                                                                                                       
                                                                                                                                        
                                                                                                                                          
                                                                                                                                            
                                                                                                                                              
                                                                                                                                               
                                                                                                                                                 
                                                                                                                                                  
                                                                                                                                                   
                                                                                                                                                     
            
             
                
                   
                      
                        
                          
                             
Post-Irradiation  
IRHM7130  
Fig 2. Typical Response of On-State Resistance  
Vs. Total Dose Exposure  
Fig 1. Typical Response of Gate Threshhold  
Voltage Vs. Total Dose Exposure  
Fig 3. Typical Response of Transconductance  
Vs. Total Dose Exposure  
Fig 4. Typical Response of Drain to Source  
Breakdown Vs. Total Dose Exposure  
4
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Post-Irradiation  
IRHM7130  
Fig 5. Typical Zero Gate Voltage Drain  
Current Vs. Total Dose Exposure  
Fig 6. Typical On-State Resistance Vs.  
NeutronFluenceLevel  
Fig 8a. Gate Stress of  
VGSS Equals 12 Volts During  
Radiation  
Fig 7. Typical Transient Response  
of Rad Hard HEXFET During 1x1012  
Rad (Si)/Sec Exposure  
Fig 8b. VDSS Stress Equals  
80% of BVDSS During Radiation  
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5
                                                                                                             
                                                                                                               
                                                                                                                  
                                                                                                                    
                                                                                                                     
                                                                                                                       
                                                                                                                        
                                                                                                                         
                                                                                                                           
                                                                                                                               
                                                                                                                                 
                                                                                                                                   
                                                                                                                                      
                                                                                                                                       
                                                                                                                                         
                                                                                                                                           
                                                                                                                                            
                                                                                                                                              
                                                                                                                                               
                                                                                                                                                
                                                                                                                                                  
                                                                                                                                                   
                                                                                                                                                    
                                                                                                                                                      
            
             
                
                   
                      
                        
                          
                             
RadiationCharacteristics  
IRHM7130  
GS DS  
Note: Bias Conditions during radiation: V = 12 Vdc, V = 0 Vdc  
Fig 9. Typical Output Characteristics  
Pre-Irradiation  
Fig 10. Typical Output Characteristics  
Post-Irradiation100KRads(Si)  
Fig 11. Typical Output Characteristics  
Post-Irradiation 300K Rads (Si)  
Fig 12. Typical Output Characteristics  
Post-Irradiation 1 Mega Rads (Si)  
6
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Radiation Characteristics  
IRHM7130  
GS DS  
Note: Bias Conditions during radiation: V = 0 Vdc, V = 80 Vdc  
Fig 13. Typical Output Characteristics  
Pre-Irradiation  
Fig 14. Typical Output Characteristics  
Post-Irradiation 100K Rads (Si)  
Fig 15. Typical Output Characteristics  
Post-Irradiation 300K Rads (Si)  
Fig 16. Typical Output Characteristics  
Post-Irradiation 1 Mega Rads (Si)  
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7
            
             
                
                   
                      
                        
                          
                             
                                                                                                                              
                                                                                                                              
                                                                                                                                
                                                                                                                                
                                                                                                                                  
                                                                                                                                  
                                                                                                                                    
                                                                                                                                    
                                                                                                                                     
                                                                                                                                     
                                                                                                                                      
                                                                                                                                      
                                                                                                                                        
                                                                                                                                        
                                                                                                                                         
                                                                                                                                         
                                                                                                                                           
                                                                                                                                            
                                                                                                                                              
                                                                                                                                              
                                                                                                                                               
                                                                                                                                               
                                                                                                                                                 
                                                                                                                                                 
                                                                                                                                                  
                                                                                                                                                  
                                                                                                                                                   
                                                                                                                                                   
                                                                                                                                                     
                                                                                                                                                     
IRHM7130  
Pre-Irradiation  
Fig 17. Typical Output Characteristics  
Fig 18. Typical Output Characteristics  
Fig 19. Typical Transfer Characteristics  
Fig 20. Normalized On-Resistance  
Vs.Temperature  
8
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Pre-Irradiation  
IRHM7130  
29  
Fig 22. Typical Gate Charge Vs.  
Fig 21. Typical Capacitance Vs.  
Gate-to-SourceVoltage  
Drain-to-SourceVoltage  
Fig 24. Maximum Safe Operating  
Fig 23. Typical Source-Drain Diode  
Area  
ForwardVoltage  
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9
            
             
                
                   
                      
                        
                          
                             
                                                                                                                              
                                                                                                                              
                                                                                                                                
                                                                                                                                
                                                                                                                                  
                                                                                                                                  
                                                                                                                                    
                                                                                                                                    
                                                                                                                                     
                                                                                                                                     
                                                                                                                                      
                                                                                                                                      
                                                                                                                                        
                                                                                                                                        
                                                                                                                                         
                                                                                                                                         
                                                                                                                                           
                                                                                                                                            
                                                                                                                                              
                                                                                                                                              
                                                                                                                                               
                                                                                                                                               
                                                                                                                                                 
                                                                                                                                                 
                                                                                                                                                  
                                                                                                                                                  
                                                                                                                                                   
                                                                                                                                                   
                                                                                                                                                     
                                                                                                                                                     
IRHM7130  
Pre-Irradiation  
RD  
VDS  
VGS  
D.U.T.  
RG  
+VDD  
-
VGS  
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
Fig 26a. Switching Time Test Circuit  
V
DS  
90%  
10%  
V
GS  
t
t
t
t
f
Fig 25. Maximum Drain Current Vs.  
CaseTemperature  
d(on)  
r
d(off)  
Fig 26b. Switching Time Waveforms  
Fig27. MaximumEffectiveTransientThermalImpedance,Junction-to-Case  
10  
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Pre-Irradiation  
IRHM7130  
15V  
DRIVER  
+
L
V
DS  
D.U.T  
R
G
V
DD  
-
I
A
AS  
V
20V  
GS  
0.01  
t
p
Fig 28a. Unclamped Inductive Test Circuit  
V
(BR)DSS  
t
p
Fig 28c. Maximum Avalanche Energy  
Vs. DrainCurrent  
I
AS  
Current Regulator  
Fig28b. UnclampedInductiveWaveforms  
Same Type as D.U.T.  
50KΩ  
.2µF  
12V  
Q
G
.3µF  
+
12 V  
V
DS  
D.U.T.  
-
Q
Q
GD  
GS  
V
GS  
V
G
3mA  
I
I
D
G
Charge  
Current Sampling Resistors  
Fig 29b. Gate Charge Test Circuit  
Fig 29a. Basic Gate Charge Waveform  
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11  
            
             
                
                   
                      
                        
                          
                             
                                                                                                                              
                                                                                                                              
                                                                                                                                
                                                                                                                                
                                                                                                                                  
                                                                                                                                  
                                                                                                                                    
                                                                                                                                    
                                                                                                                                     
                                                                                                                                     
                                                                                                                                      
                                                                                                                                      
                                                                                                                                        
                                                                                                                                        
                                                                                                                                         
                                                                                                                                         
                                                                                                                                           
                                                                                                                                            
                                                                                                                                              
                                                                                                                                              
                                                                                                                                               
                                                                                                                                               
                                                                                                                                                 
                                                                                                                                                 
                                                                                                                                                  
                                                                                                                                                  
                                                                                                                                                   
                                                                                                                                                   
                                                                                                                                                     
                                                                                                                                                     
IRHM7130  
Pre-Irradiation  
Foot Notes:  
Pulse width 300 µs; Duty Cycle 2%  
Total Dose Irradiation with V Bias.  
➀➀ Repetitive Rating; Pulse width limited by  
maximum junction temperature.  
GS  
= 0 during  
12 volt V  
applied and V  
V  
DD  
= 25V, starting T = 25°C, L=1.63mH  
J
GS DS  
irradiation per MIL-STD-750, method 1019, condition A.  
Peak I = 14A, V  
L
=12V  
GS  
Total Dose Irradiation with V Bias.  
80 volt V applied and V  
DS GS  
irradiation per MlL-STD-750, method 1019, condition A.  
➀➀ I  
SD  
14A, di/dt 140A/µs,  
DS  
= 0 during  
V
DD  
100V, T 150°C  
J
Case Outline and Dimensions — TO-254AA  
.12 ( .005 )  
13.84 ( .545 )  
13.59 ( .535 )  
-B-  
6.60 ( .260 )  
6.32 ( .249 )  
3.78 ( .149 )  
3.53 ( .139 )  
-A-  
1.27 ( .050 )  
1.02 ( .040 )  
20.32 ( .800 )  
20.07 ( .790 )  
17.40 ( .685 )  
16.89 ( .665 )  
13.84 ( .545 )  
13.59 ( .535 )  
LEGEND  
1 - COLL  
31.40 ( 1.235 )  
30.39 ( 1.199 )  
2 - EMIT  
3 - GATE  
1
2
3
-C-  
1.14 ( .045 )  
3X  
3.81 ( .150 )  
0.89 ( .035 )  
3.81 ( .150 )  
2X  
.50 ( .020 )  
.25 ( .010 )  
M
M
C
C
A
M
B
LEGEND  
1- DRAIN  
2- SOURCE  
3- GATE  
CAUTION  
BERYLLIA WARNING PER MIL-PRF-19500  
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them  
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids  
that will produce fumes containing beryllium.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.  
Data and specifications subject to change without notice. 07/01  
12  
www.irf.com  

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