关闭背景特效

IRHMB54Z60 [IRF]

RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA); 抗辐射功率MOSFET直通孔（无接头 - 低电阻TO- 254AA ）

IRHMB54Z60


元器件型号：	IRHMB54Z60
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA) 抗辐射功率MOSFET直通孔（无接头 - 低电阻TO- 254AA ）
PDF文件：	总8页 (文件大小：172K)
下载文档：	下载PDF数据表文档文件
型号参数：IRHMB54Z60参数

IRHMB54Z60PBF

Power Field-Effect Transistor, 45A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TABLESS TO-254AA, 3 PIN

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0 IRF

IRHMB57064

RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)

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8 IRF

IRHMB57260SE

RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

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11 IRF

IRHMB57260SEPBF

Power Field-Effect Transistor, 45A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN

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0 IRF

IRHMB57Z60

RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)

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10 IRF

IRHMB58064

RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)

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9 IRF

IRHMB58064PBF

Power Field-Effect Transistor, 45A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN

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0 IRF

IRHMB58Z60

RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)

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6 IRF

IRHMB58Z60PBF

Power Field-Effect Transistor, 45A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TABLESS TO-254AA, 3 PIN

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0 IRF

IRHMJ3250

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)

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30 IRF

IRHMJ4250

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)

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20 IRF

IRHMJ53160

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)

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6 IRF

IRHMJ54160

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)

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7 IRF

IRHMJ54160PBF

暂无描述

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0 IRF

IRHMJ57160

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)

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14 IRF

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