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IRHMS53160 [IRF]

RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 100V, N-CHANNEL; 抗辐射功率MOSFET直通孔（低电阻TO- 254AA ） 100V N沟道
IRHMS53160
元器件型号： IRHMS53160
生产厂家： INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述和应用：

RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 100V, N-CHANNEL
抗辐射功率MOSFET直通孔（低电阻TO- 254AA ） 100V N沟道

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PDF文件： 总8页 (文件大小：175K)
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型号参数：IRHMS53160参数
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IRHMS53Z60

 RADIATION HARDENED POWER MOSFET THRU-HOLE

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7 IRF

IRHMS54160

 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 100V, N-CHANNEL

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4 IRF

IRHMS54160

 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 100V, N-CHANNEL

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5 IRF

IRHMS54160PBF

 Power Field-Effect Transistor, 45A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3

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0 IRF

IRHMS54Z60

 RADIATION HARDENED POWER MOSFET THRU-HOLE

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4 IRF

IRHMS57064

 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

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29 IRF

IRHMS57160

 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 100V, N-CHANNEL

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30 IRF

IRHMS57160

 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 100V, N-CHANNEL

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10 IRF

IRHMS57160PBF

 Power Field-Effect Transistor, 45A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3

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0 INFINEON

IRHMS57163SE

 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

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27 IRF

IRHMS57163SEPBF

 暂无描述

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0 IRF

IRHMS57260SE

 RADIATION HARDENED POWER MOSFET

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15 IRF

IRHMS57260SEPBF

 Power Field-Effect Transistor, 45A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3

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0 IRF

IRHMS57264SE

 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 250V, N-CHANNEL

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15 IRF

IRHMS57264SEPBF

 Power Field-Effect Transistor, 37A I(D), 250V, 0.061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3

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0 IRF
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