IRHNA53260 [IRF]

200V, N-CHANNEL; 200V N沟道

IRHNA53260


型号：	IRHNA53260
厂家：	INTERNATIONAL RECTIFIER
描述：	200V, N-CHANNEL 200V N沟道
文件：	总8页 (文件大小：109K)
下载：	下载PDF数据表文档文件

IRHNA53260PBF

Power Field-Effect Transistor, 55A I(D), 200V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN

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0 IRF

IRHNA53Z60

RADIATION HARDENED POWER MOSFET

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14 IRF

IRHNA53Z60

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT

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12 ETC

IRHNA54064

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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10 IRF

IRHNA54064

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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7 IRF

IRHNA54160

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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12 IRF

IRHNA54260

200V, N-CHANNEL

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9 IRF

IRHNA54260

200V, N-CHANNEL

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13 IRF

IRHNA54Z60

RADIATION HARDENED POWER MOSFET

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29 IRF

IRHNA54Z60

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT

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17 ETC

IRHNA57060

200V, N-CHANNEL

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11 IRF

IRHNA57060

200V, N-CHANNEL

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9 IRF

IRHNA57064

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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9 IRF

IRHNA57064

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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52 IRF

IRHNA57064SCS

Power Field-Effect Transistor, 75A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD2, 3 PIN

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0 IRF

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