IRHNA57060 [IRF]

200V, N-CHANNEL; 200V N沟道

IRHNA57060


型号：	IRHNA57060
厂家：	INTERNATIONAL RECTIFIER
描述：	200V, N-CHANNEL 200V N沟道
文件：	总8页 (文件大小：109K)
下载：	下载PDF数据表文档文件

IRHNA57064

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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9 IRF

IRHNA57064

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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52 IRF

IRHNA57064SCS

Power Field-Effect Transistor, 75A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD2, 3 PIN

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0 IRF

IRHNA57064SCV

Power Field-Effect Transistor, 75A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD2, 3 PIN

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0 IRF

IRHNA57160

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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37 IRF

IRHNA57160PBF

暂无描述

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0 IRF

IRHNA57160SCV

暂无描述

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0 IRF

IRHNA57163SE

130V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package

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25 ETC

IRHNA57163SE

RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2)

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15 IRF

IRHNA57163SESCS

Power Field-Effect Transistor, 75A I(D), 130V, 0.0137ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN

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0 IRF

IRHNA57163SESCS

Power Field-Effect Transistor, 75A I(D), 130V, 0.0137ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN

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0 IRF

IRHNA57163SESCSPBF

Power Field-Effect Transistor, 75A I(D), 130V, 0.0137ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN

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0 IRF

IRHNA57260

200V, N-CHANNEL

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19 IRF

IRHNA57260

200V, N-CHANNEL

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11 IRF

IRHNA57260PBF

暂无描述

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0 IRF

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