IRHNA57260 [IRF]

200V, N-CHANNEL; 200V N沟道

IRHNA57260


型号：	IRHNA57260
厂家：	INTERNATIONAL RECTIFIER
描述：	200V, N-CHANNEL 200V N沟道
文件：	总8页 (文件大小：109K)
下载：	下载PDF数据表文档文件

IRHNA57260PBF

暂无描述

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0 IRF

IRHNA57260SE

200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package

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8 ETC

IRHNA57260SE

RADIATION HARDENED POWER MOSFET THRU-HOLE (SMD-2)

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13 IRF

IRHNA57260SESCS

Power Field-Effect Transistor, 55A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD2, 3 PIN

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0 IRF

IRHNA57264SE

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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9 IRF

IRHNA57264SE

250V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package

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19 ETC

IRHNA57264SESCS

Power Field-Effect Transistor, 49A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD2, 3 PIN

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0 IRF

IRHNA5760SE

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 55A I(D) | SMT

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4 ETC

IRHNA57Z60

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT

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19 ETC

IRHNA57Z60

RADIATION HARDENED POWER MOSFET

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72 IRF

IRHNA57Z60

Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN

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1 IRF

IRHNA57Z60SCS

Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD2, 3 PIN

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0 INFINEON

IRHNA58064

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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5 IRF

IRHNA58064

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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8 IRF

IRHNA58064PBF

Power Field-Effect Transistor, 75A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN

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0 IRF

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