IRHNA57260SESCS [INFINEON]
Power Field-Effect Transistor, 55A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD2, 3 PIN;
| 型号： | IRHNA57260SESCS |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 55A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD2, 3 PIN |
| 文件： | 总8页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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