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IRHNA597064 [IRF]

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2); 抗辐射功率MOSFET表面贴装（ SMD - 2 ）

IRHNA597064


元器件型号：	IRHNA597064
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 抗辐射功率MOSFET表面贴装（ SMD - 2 ）晶体晶体管功率场效应晶体管开关脉冲
PDF文件：	总8页 (文件大小：227K)
下载文档：	下载PDF数据表文档文件
型号参数：IRHNA597064参数

IRHNA597160

TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 52A I(D) | SMT

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22 ETC

IRHNA597160

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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27 IRF

IRHNA597260

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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32 IRF

IRHNA597Z60

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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12 IRF

IRHNA597Z60SCSD

Power Field-Effect Transistor,

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0 INFINEON

IRHNA63160

RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2), 100V, N-CHANNEL

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31 IRF

IRHNA63164

RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)

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12 IRF

IRHNA63260

RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)

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13 IRF

IRHNA63264

RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)

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13 IRF

IRHNA63264

Power Field-Effect Transistor, 56A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN

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0 INFINEON

IRHNA67160

RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2), 100V, N-CHANNEL

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57 IRF

IRHNA67160PBF

Power Field-Effect Transistor, 56A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN

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0 IRF

IRHNA67160SCS

Power Field-Effect Transistor, 56A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRHNA67164

RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)

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62 IRF

IRHNA67260

RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)

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102 IRF

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