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IRKT105/12A [INFINEON]

Silicon Controlled Rectifier, 164.85A I(T)RMS, 105000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 Element, TO-240AA, ADD-A-PAK-7;
IRKT105/12A
型号： IRKT105/12A
厂家： Infineon    Infineon
描述：

Silicon Controlled Rectifier, 164.85A I(T)RMS, 105000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 Element, TO-240AA, ADD-A-PAK-7

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Bulletin I27133 rev. H 10/02  
IRK.105 SERIES  
THYRISTOR/ DIODE and  
THYRISTOR/ THYRISTOR  
ADD-A-pakTM GEN V Power Modules  
Features  
Benefits  
High Voltage  
Up to 1600V  
Industrial Standard Package  
Thick Al metal die and double stick bonding  
Thick copper baseplate  
Full compatible TO-240AA  
105 A  
High Surge capability  
Easy Mounting on heatsink  
Al203 DBC insulator  
UL E78996 approved  
3500VRMS isolating voltage  
Heatsink grounded  
Mechanical Description  
The Generation V of Add-A-pak module combine the  
excellentthermalperformanceobtainedbytheusageof  
Direct Bonded Copper substrate with superior  
mechanical ruggedness, thanks to the insertion of a  
solidCopperbaseplateatthebottomsideofthedevice.  
The Cu baseplate allow an easier mounting on the  
majority of heatsink with increased tolerance of surface  
roughness and improve thermal spread.  
Theelectricalterminalsaresecuredagainstaxialpull-out:  
they are fixed to the module housing via a click-stop  
feature already tested and proved as reliable on other IR  
modules.  
Electrical Description  
These modules are intended for general purpose high  
voltage applications such as high voltage regulated power  
supplies, lighting circuits, temperature and motor speed  
control circuits, UPS and battery charger.  
The Generation V of AAP module is manufactured  
without hard mold, eliminating in this way any possible  
direct stress on the leads.  
Major Ratings and Characteristics  
Parameters  
IT(AV)or IF(AV)  
@ 85°C  
IRK.105  
Units  
105  
235  
A
IO(RMS) (*)  
A
A
A
ITSM @50Hz  
IFSM @60Hz  
1785  
1870  
15.91  
14.52  
159.1  
2
2
I t @50Hz  
KA s  
2
@60Hz  
KA s  
2
2
I √t  
KA √s  
VRRM range  
TSTG  
400 to 1600  
- 40 to 150  
- 40 to130  
V
oC  
oC  
TJ  
(*) As AC switch.  
1
www.irf.com  
IRK.105 Series  
Bulletin I27133 rev. H 10/02  
ELECTRICAL SPECIFICATIONS  
Voltage Ratings  
VRRM , maximum  
repetitive  
peak reverse voltage peak reverse voltage  
VRSM , maximum  
non-repetitive  
VDRM , max. repetitive  
peak off-state voltage,  
gate open circuit  
IRRM  
IDRM  
130°C  
mA  
Voltage  
Type number  
Code  
-
V
V
V
04  
06  
08  
400  
600  
800  
1000  
1200  
500  
700  
900  
1100  
1300  
400  
600  
800  
IRK.105  
10  
12  
14  
16  
1000  
1200  
20  
1400  
1600  
1500  
1700  
1400  
1600  
On-state Conduction  
Parameters  
IRK.105  
105  
Units  
Conditions  
IT(AV) Max. average on-state  
current (Thyristors)  
180o conduction, half sine wave,  
TC=85oC  
IF(AV) Max. average forward  
current (Diodes)  
IO(RMS Max. continuous RMS  
) on-state current.  
235  
or  
I(RMS)  
I(RMS)  
As AC switch  
A
ITSM Max. peak, one cycle  
1785  
1870  
1500  
1570  
2000  
2100  
15.91  
14.52  
11.25  
10.27  
20.00  
18.30  
159.1  
0.80  
t=10ms No voltage  
Sinusoidal  
half wave,  
Initial TJ =TJ max.  
or  
non-repetitive on-state  
t =8.3ms reapplied  
t=10ms 100%VRRM  
t =8.3ms reapplied  
t =10ms TJ =25oC,  
IFSM or forward current  
t =8.3ms no voltage reapplied  
t=10ms No voltage  
I2t  
Max. I2t for fusing  
t =8.3ms reapplied  
Initial TJ =TJ max.  
t=10ms 100%VRRM  
KA2s  
t =8.3ms reapplied  
t =10ms TJ =25oC,  
t =8.3ms no voltage reapplied  
t =0.1to10ms,no voltage reappl. TJ=TJ max  
I2√t  
Max. I2√t for fusing (1)  
KA2√s  
VT(TO) Max. value of threshold  
voltage (2)  
Low level (3)  
TJ = TJ max  
V
0.85  
High level (4)  
r
Max. value of on-state  
slope resistance (2)  
2.37  
Low level (3)  
TJ = TJ max  
t
mΩ  
2.25  
High level (4)  
VTM Max. peak on-state or  
VFM forward voltage  
ITM=pxIT(AV)  
TJ = 25°C  
1.64  
V
IFM=pxIF(AV)  
di/dt Max. non-repetitive rate  
TJ = 25oC, from 0.67 VDRM  
TM =p x IT(AV), I = 500mA,  
,
of rise of turned on  
current  
150  
200  
400  
A/µs  
mA  
I
g
t < 0.5 µs, t > 6 µs  
p
r
IH  
Max. holding current  
TJ =25oC,anodesupply=6V,  
resistive load, gate open circuit  
IL  
Max. latching current  
TJ=25oC,anode supply=6V,resistive load  
2
(1) I2t for time tx = I2√t x √tx  
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS)  
)
(3) 16.7% x p x IAV < I < p x IAV  
(4) I > p x IAV  
www.irf.com  
2
IRK.105 Series  
Bulletin I27133 rev. H 10/02  
Triggering  
Parameters  
IRK.105  
Units  
Conditions  
PGM Max. peak gate power  
12  
3
W
PG(AV) Max. average gate power  
IGM  
Max. peak gate current  
3
A
-VGM Max.peak negative  
gate voltage  
10  
VGT Max. gate voltage  
required to trigger  
4.0  
2.5  
1.7  
270  
150  
80  
TJ =-40°C  
TJ =25°C  
V
Anode supply=6V  
resistive load  
TJ =125°C  
TJ =-40°C  
TJ =25°C  
IGT  
Max. gate current  
required to trigger  
Anode supply=6V  
resistive load  
mA  
TJ =125°C  
TJ =125oC,  
rated VDRM applied  
VGD Max. gate voltage  
that will not trigger  
0.25  
6
V
IGD  
Max. gate current  
that will not trigger  
TJ =125oC,  
rated VDRM applied  
mA  
Blocking  
Parameters  
IRK.105  
20  
Units  
mA  
Conditions  
IRRM Max. peak reverse and  
IDRM off-state leakage current  
at VRRM, VDRM  
TJ = 130oC, gate open circuit  
VINS RMS isolation voltage  
2500 (1 min)  
3500 (1 sec)  
50 Hz, circuit to base, all terminals  
shorted  
V
dv/dt Max. critical rate of rise  
of off-state voltage (5)  
TJ = 130oC, linear to 0.67 VDRM  
gate open circuit  
,
500  
V/µs  
(5) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. IRKT105/16AS90.  
Thermal and Mechanical Specifications  
Parameters  
IRK.105  
Units  
°C  
Conditions  
TJ  
T
Junction operating  
temperature range  
Storage temp. range  
- 40 to 130  
-40to150  
stg  
RthJC Max. internal thermal  
resistance, junction  
to case  
0.135  
Per module,DC operation  
K/W  
RthCS Typical thermal resistance  
case to heatsink  
Mounting surface flat, smooth and greased  
0.1  
5
T
Mounting torque±10%  
to heatsink  
busbar  
A mounting compound is recommended  
and the torque should be rechecked after  
a period of 3 hours to allow for the spread  
of the compound  
Nm  
3
wt  
Approximate weight  
Case style  
110(4)  
gr(oz)  
TO-240AA  
JEDEC  
∆R Conduction (per Junction)  
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)  
Sine half wave conduction  
Rect. wave conduction  
Devices  
IRK.105  
Units  
°C/ W  
180o  
0.04  
120o  
90o  
60o  
30o  
180o  
0.03  
120o  
90o  
60o  
30o  
0.05  
0.06  
0.08  
0.12  
0.05  
0.06  
0.08  
0.12  
www.irf.com  
3
IRK.105 Series  
Bulletin I27133 rev. H 10/02  
Ordering Information Table  
Device Code  
IRK.106 types  
With no auxiliary cathode  
IRK  
T
105  
/
16  
A
S90  
1
2
3
5
6
4
1
2
3
4
5
6
-
-
-
-
-
-
Module type  
Circuit configuration (See Circuit Configuration table below)  
Current code * *  
* * Available with no auxiliary cathode.  
To specify change:  
105 to 106  
Voltage code (See Voltage Ratings table)  
A : Gen V  
e.g. : IRKT106/16A etc.  
dv/dt code:  
S90 = dv/dt 1000 V/µs  
No letter = dv/dt 500 Vµs  
Outline Table  
Dimensions are in millimeters and [inches]  
IRKN  
IRKT  
IRKH  
IRKL  
(1)  
~
(1)  
~
(1)  
~
ꢀ1)  
-
+
(2)  
+
(2)  
+
(2)  
+
ꢀ2)  
-
(3)  
-
(3)  
-
(3)  
+
ꢀ3)  
G1 K1  
(4) (5)  
G1  
(4) (5)  
K2 G2  
(7) (6)  
G1 K1  
K2 G2  
(7) (6)  
K1  
ꢀ4) ꢀ5)  
NOTE: To order the Optional Hardware see Bulletin I27900  
www.irf.com  
4
IRK.105 Series  
Bulletin I27133 rev. H 10/02  
130  
120  
110  
100  
90  
130  
120  
110  
100  
90  
IRK.105.. Se rie s  
(DC) = 0.27 K/W  
IRK.105.. Se rie s  
R
R
(DC) = 0.27 K/ W  
thJC  
thJC  
Co nd uc tio n Ang le  
Co nd uc tio n Pe rio d  
30°  
40  
30°  
60°  
60  
60°  
90°  
90°  
80  
80  
120°  
180°  
120°  
DC  
180°  
70  
70  
0
20 40 60 80 100 120 140 160 180  
Ave ra g e On-sta te C urre nt (A)  
0
20  
80  
100  
120  
Ave ra g e On-sta te Curre nt (A)  
Fig. 1 - Current Ratings Characteristics  
Fig. 2 - Current Ratings Characteristics  
160  
140  
120  
100  
80  
200  
180  
160  
140  
120  
100  
80  
180°  
120°  
90°  
60°  
30°  
DC  
180°  
120°  
90°  
60°  
30°  
RMS Lim it  
RMS Lim it  
Co nd uc tio n Pe rio d  
60  
C o nd uc tio n Ang le  
60  
40  
IRK.105.. Se rie s  
Pe r Junc tion  
IRK.105.. Se rie s  
Pe r Junc tion  
40  
20  
T
= 130°C  
20  
J
T
= 130°C  
J
0
0
0
20  
40  
60  
80  
100  
120  
0
20 40 60 80 100 120 140 160 180  
Ave ra g e On-sta te C urre nt (A)  
Ave ra g e O n-sta te Curre nt (A)  
Fig. 3 - On-state Power Loss Characteristics  
Fig. 4 - On-state Power Loss Characteristics  
1600  
1500  
1400  
1300  
1200  
1100  
1000  
900  
1800  
1600  
1400  
1200  
1000  
800  
Ma ximum Non Re p e titive Surg e Curre nt  
Ve rsus Pulse Tra in Dura tion. Control  
Of Cond uc tio n Ma y Not Be Ma inta ine d .  
At Any Ra te d Loa d Cond ition And With  
Ra te d V  
Ap p lie d Following Surg e .  
RRM  
Initia l T = 130°C  
J
Initia l T = 130°C  
@ 60 Hz 0.0083 s  
@ 50 Hz 0.0100 s  
J
No Volta g e Re a p p lie d  
Ra te d V  
Re a p p lie d  
RRM  
IRK.105.. Se rie s  
Pe r Junc tio n  
IRK.105.. Se rie s  
Pe r Junc tio n  
800  
600  
700  
0.01  
0.1  
Pulse Tra in Dura tion (s)  
1
1
10  
100  
Num b e r O f Eq ua l Am p litud e Ha lf Cyc le C urre nt Pulse s (N)  
Fig. 6 - Maximum Non-Repetitive Surge Current  
Fig. 5 - Maximum Non-Repetitive Surge Current  
www.irf.com  
5
IRK.105 Series  
Bulletin I27133 rev. H 10/02  
350  
300  
250  
200  
150  
180°  
120°  
90°  
60°  
30°  
Co nduc tion Ang le  
100  
50  
0
IRK.105.. Se rie s  
Pe r Mod ule  
T
= 130°C  
J
0
40  
80  
120  
160  
200  
240 20  
40  
60  
80 100 120 140  
Tota l RMS Outp ut Curre nt (A)  
Ma xim um Allowa b le Am b ie nt Te m p e ra ture (°C)  
Fig. 7 - On-state Power Loss Characteristics  
600  
180°  
(Sine )  
180°  
500  
400  
300  
200  
100  
0
(Re c t)  
2 x IRK.105.. Se rie s  
Sing le Pha se Brid g e  
Conne c te d  
T
= 130°C  
J
0
40  
80  
120  
160  
200  
20  
40  
60  
80 100 120 140  
To ta l Outp ut Curre nt (A)  
Ma xim um Allow a b le Am b ie nt Te m p e ra ture (°C )  
Fig. 8 - On-state Power Loss Characteristics  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
R
=
0
.
1
K
/
W
-
D
120°  
(Re c t)  
e
l
t
a
0
.
2
R
K
/
W
0
.
3
K
/
W
3 x IRK.105.. Se rie s  
Thre e Pha se Brid g e  
Con ne c te d  
1
K
/
W
T
= 130°C  
J
0
40  
80 120 160 200 240 280  
20  
40  
60  
80 100 120 140  
Ma xim um Allowa b le Am b ie nt Te m p e ra ture (°C )  
To ta l Outp ut Curre nt (A)  
Fig. 9 - On-state Power Loss Characteristics  
www.irf.com  
6
IRK.105 Series  
Bulletin I27133 rev. H 10/02  
1000  
100  
10  
T = 25°C  
J
T = 130°C  
J
IRK.105.. Se rie s  
Pe r Junc tio n  
1
0
0.5  
1
1.5  
2
2.5  
3
3.5  
Insta nta ne o us On-sta te Volta g e (V)  
Fig. 10 - On-state Voltage Drop Characteristics  
140  
700  
600  
500  
400  
300  
200  
100  
I
= 200 A  
100 A  
IRK.105.. Se rie s  
T = 125 °C  
TM  
I
= 200 A  
100 A  
IRK.105.. Se rie s  
TM  
120  
100  
80  
J
T = 125 °C  
J
50 A  
20 A  
10 A  
50 A  
20 A  
10 A  
60  
40  
20  
10 20 30 40 50 60 70 80 90 100  
10 20 30 40 50 60 70 80 90 100  
Ra te O f Fa ll Of On-sta te Curre nt - d i/ dt (A/ µs)  
Ra te Of Fa ll Of Fo rwa rd Curre nt - d i/ d t (A/ µs)  
Fig. 12 - Recovery Current Characteristics  
Fig. 11 - Recovery Charge Characteristics  
1
Ste a d y Sta te Va lue :  
R
= 0.27 K/ W  
thJC  
(DC Op e ra tion)  
0.1  
IRK.105.. Se rie s  
Pe r Junc tion  
0.01  
0.001  
0.01  
0.1  
1
10  
Sq ua re Wa ve Pulse Dura tion (s)  
Fig. 13 - Thermal Impedance ZthJC Characteristics  
www.irf.com  
7
IRK.105 Series  
Bulletin I27133 rev. H 10/02  
100  
Re c ta ng ula r g a te p ulse  
(1) PGM = 200 W, tp = 300 µs  
(2) PGM = 60 W, tp = 1 ms  
(3) PGM = 30 W, tp = 2 ms  
(4) PGM = 12 W, tp = 5 ms  
a )Re c om m e nd e d lo a d line fo r  
ra te d d i/d t: 20 V, 20 o hm s  
tr = 0.5 µs, tp >= 6 µs  
b )Re c om m e nd e d lo a d line fo r  
<= 30% ra te d d i/ d t: 15 V, 40 o hm s  
tr = 1 µs, tp >= 6 µs  
10  
1
(a )  
(b )  
(3)  
(4)  
(2)  
(1)  
VGD  
IGD  
0.01  
IRK.105.. Se rie s  
Fre q ue nc y Lim ite d b y PG(AV)  
10 100 1000  
0.1  
0.001  
0.1  
1
Insta nta ne o us Ga te Curre nt (A)  
Fig. 14- Gate Characteristics  
Data and specifications subject to change without notice.  
This product has been designed and qualified for Industrial Level.  
Qualification Standards can be found on IR's Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7309  
Visit us at www.irf.com for sales contact information. 10/02  
www.irf.com  
8

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