IRL5Y7413CM [IRF]
HEXFET POWER MOSFET THRU-HOLE (TO-257AA); HEXFET功率MOSFET直通孔（ TO- 257AA ）
| 型号： | IRL5Y7413CM |
| 厂家： | 
INTERNATIONAL RECTIFIER |
| 描述： | HEXFET POWER MOSFET THRU-HOLE (TO-257AA) |
| 文件： | 总7页 (文件大小：105K) |
| 下载： | 下载PDF数据表文档文件 |
IRL60B216
Brushed Motor drive applicationsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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1
IRF
IRL60B216_15
Brushed Motor drive applicationsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
IRF
IRL60S216
Half-bridge and full-bridge topologiesWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
INFINEON
IRL60SL216
Half-bridge and full-bridge topologiesWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
INFINEON
IRL610
Advanced Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
38
FAIRCHILD
IRL610
Advanced Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
16
FAIRCHILD
IRL610
Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
SAMSUNG
IRL610A
Advanced Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
25
FAIRCHILD
IRL610AJ69Z
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
FAIRCHILD
IRL610J69Z
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
FAIRCHILD
IRL610S
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 3.3A I(D) | TO-263ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
22
ETC
IRL610SR
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
FAIRCHILD
IRL610SU
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
FAIRCHILD
IRL611
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2.6A I(D) | TO-220ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
16
ETC
IRL611
Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
SAMSUNG
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