IRLH5036PBF [INFINEON]

HEXFET Power MOSFET; HEXFET功率MOSFET


型号：	IRLH5036PBF
厂家：	Infineon
描述：	HEXFET Power MOSFET HEXFET功率MOSFET
文件：	总8页 (文件大小：304K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD-96300

IRLH5036PbF

HEXFET^®Power MOSFET

V_DS

R_{DS(on) max}

(@V_GS= 4.5V)

Q_{g (typical)}

5.5

Ω

R_{G (typical)}

1.2

Ω

I_D

PQFN 5X6 mm

100

(@T_c(Bottom)= 25°C)

Applications

• Secondary Side Synchronous Rectification

• Inverters for DC Motors

• DC-DC Brick Applications

• Boost Converters

FeaturesandBenefits

Features

Benefits

Low RDSon (< 5.5 mΩ @ Vgs = 4.5V )

Low Thermal Resistance to PCB (< 0.5°C/W)

100% Rg tested

Lower Conduction Losses

Enables better thermal dissipation

Increased Reliability

Low Profile (<0.9 mm)

results in Increased Power Density

Industry-Standard Pinout

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

⇒

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Orderable part number

Package Type

Standard Pack

Note

Form

Tape and Reel

Quantity

4000

IRLH5036TRPBF

IRLH5036TR2PBF

PQFN 5mm x 6mm

400

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Max.

Units

V_DS

V_GS

± 16

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

100

400

3.6

Power Dissipation

P_D@T_A= 25°C

P_D@ T_C(Bottom)= 25°C

W/°C

°C

Power Dissipation

250

Linear Derating Factor

0.029

-55 to + 150

T_J

Operating Junction and

Storage Temperature Range

T_STG

Notes through are on page 8

www.irf.com

04/12/10

IRLH5036PbF

Static @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

60 ––– –––

––– 0.07 ––– V/°C Reference to 25°C, I_D= 1.0mA

Conditions

V_GS= 0V, I_D= 250uA

BV_DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

∆Β

/ T

∆

DSS

R_DS(on)

–––

1.0

3.7

4.6

4.4

5.5

2.5

V_GS= 10V, I_D= 50A

V_GS= 4.5V, I_D= 50A

Ω

V_GS(th)

Gate Threshold Voltage

–––

-6.6

–––

V_DS= V_GS, I_D= 150µA

∆

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

–––

109

–––

––– mV/°C

GS(th)

I_DSS

µA

V_DS= 60V, V_GS= 0V

250

_DS= 60V, V_GS= 0V, T_J= 125°C

_GS= 16V

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

100

––– -100

V_GS= -16V

V_DS= 25V, I_D= 50A

gfs

Q_g

–––

nC V_GS= 10V, V_DS= 30V, I_D= 50A

Total Gate Charge

Q_gs1

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

9.5

4.5

–––

V_DS= 30V

Q_gs2

Q_gd

V_GS= 4.5V

I_D= 50A

Q_godr

Gate Charge Overdrive

Switch Charge (Q_gs2+ Q_gd)

Output Charge

Q_sw

Q_oss

V_DS= 16V, V_GS= 0V

R_G

t_d(on)

t_r

Gate Resistance

Turn-On Delay Time

Rise Time

–––

1.2

–––

Ω

V_DD= 30V, V_GS= 4.5V

I_D= 50A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R =1.7

Ω

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

––– 5360 –––

V_GS= 0V

–––

600

250

–––

V_DS= 25V

ƒ = 1.0MHz

Avalanche Characteristics

Parameter

Typ.

–––

Max.

286

Units

Single Pulse Avalanche Energy

E_AS

I_AR

Avalanche Current

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

I_S

Continuous Source Current

MOSFET symbol

–––

––– 100

(Body Diode)

Pulsed Source Current

(Body Diode)

showing the

integral reverse

I_SM

–––

400

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

–––

1.3

T_J= 25°C, I_S= 50A, V_GS= 0V

ns T_J= 25°C, I_F= 50A, V_DD= 30V

di/dt = 500A/µs

Q_rr

t_on

134

201

Time is dominated by parasitic Inductance

Thermal Resistance

Parameter

Typ.

–––

Max.

0.5

Units

Junction-to-Case

Junction-to-Ambient

R_θ_JC(Bottom)

R_θ_JC(Top)

R_θJA

°C/W

R_θ_JA(<10s)

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IRLH5036PbF

1000

100

1000

100

VGS

15V

10V

4.5V

4.0V

3.3V

3.1V

2.9V

2.7V

VGS

15V

10V

4.5V

4.0V

3.3V

3.1V

2.9V

2.7V

TOP

BOTTOM

2.7V

60µs

Tj = 25°C

≤

PULSE WIDTH

60µs

PULSE WIDTH

Tj = 150°C

≤

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

1000

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

= 50A

= 10V

100

= 150°C

= 25°C

= 25V

≤

60µs PULSE WIDTH

0.1

1.5

2.5

3.5

4.5

5.5

-60 -40 -20

20 40 60 80 100 120140 160

, Junction Temperature (°C)

, Gate-to-Source Voltage (V)

Fig 4. Normalized On-Resistance Vs. Temperature

Fig 3. Typical Transfer Characteristics

100000

= 0V,

= C

f = 1 MHZ

= 50A

= 48V

= 30V

+ C , C

SHORTED

iss

= C

rss

oss

= C + C

VDS= 12V

10000

1000

100

iss

oss

rss

100

120

, Drain-to-Source Voltage (V)

100

Q , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage

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IRLH5036PbF

1000

100

1000

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100µsec

= 150°C

100

1msec

10msec

= 25°C

Tc = 25°C

Tj = 150°C

Single Pulse

= 0V

1.4

0.1

1.0

0.10

100

0.2

0.4

0.6

0.8

1.0

1.2

1.6

, Drain-to-Source Voltage (V)

, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

3.0

2.5

2.0

1.5

1.0

0.5

175

Limited By Package

150

125

100

= 1.0A

ID = 1.0mA

ID = 150µA

-75 -50 -25

25 50 75 100 125 150

100

125

150

, Temperature ( °C )

, Case Temperature (°C)

Fig 9. Maximum Drain Current Vs.

Fig 10. Threshold Voltage Vs. Temperature

Case (Bottom) Temperature

D = 0.50

0.20

0.1

0.01

0.10

0.02

0.01

0.05

0.001

Notes:

SINGLE PULSE

( THERMAL RESPONSE )

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.0001

1E-006

1E-005

0.0001

0.001

0.01

0.1

, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)

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IRLH5036PbF

1200

1000

800

600

400

200

= 50A

TOP

15A

18A

BOTTOM 50A

= 125°C

= 25°C

100

125

150

Starting T , Junction Temperature (°C)

Gate -to -Source Voltage (V)

GS,

Fig 13. Maximum Avalanche Energy vs. Drain Current

Fig 12. On-Resistance vs. Gate Voltage

(BR)DSS

15V

DRIVER

D.U.T

20V

Ω

0.01

Fig 14b. Unclamped Inductive Waveforms

Fig 14a. Unclamped Inductive Test Circuit

R_D

V_DS

90%

V_GS

D.U.T.

R_G

⁺V_DD

10%

V_GS

10V

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1

t_d(on)

t_d(off)

t_r

t_f

Fig 15a. Switching Time Test Circuit

Fig 15b. Switching Time Waveforms

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IRLH5036PbF

Driver Gate Drive

P.W.

Period

D.U.T

Period

D =

=10V

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

V_DD

Re-Applied

Voltage

• dv/dt controlled by R_G

R_G

Body Diode

Forward Drop

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET^®Power MOSFETs

Vds

Vgs

VCC

DUT

Vgs(th)

Qgs1

Qgs2

Qgd

Qgodr

Fig 18. Gate Charge Waveform

Fig 17. Gate Charge Test Circuit

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IRLH5036PbF

PQFN 5x6 Outline "B" Package Details

For footprint and stencil design recommendations, please refer to application note AN-1154 at

http://www.irf.com/technical-info/appnotes/an-1154.pdf

PQFN 5x6 Outline "B" Part Marking

INTERNATIONAL

RECTIFIER LOGO

DATE CODE

PART NUMBER

XXXX

(“4 or 5 digits”)

ASSEMBLY

SITE CODE

(Per SCOP 200-002)

MARKING CODE

XYWWX

XXXXX

(Per Marking Spec)

PIN 1

IDENTIFIER

LOT CODE

(Eng Mode - Min last 4 digits of EATI#)

(Prod Mode - 4 digits of SPN code)

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

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IRLH5036PbF

PQFN 5x6 Outline "B" Tape and Reel

Qualification information^†

Industrial^††

(per JEDEC JES D47F ^†††guidelines )

MS L 1

Qualification level

Moisture Sensitivity Level

RoHS compliant

PQFN 5mm x 6mm

(per JEDEC J-ST D-020D^†††

)

Yes

Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability

Higher qualification ratings may be available should the user have such requirements.

Please contact your International Rectifier sales representative for further information:

http://www.irf.com/whoto-call/salesrep/

Applicable version of JEDEC standard at the time of product release.

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Starting T_J= 25°C, L = 0.229mH, R_G= 50Ω, I_AS= 50A.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

R is measured at T_Jof approximately 90°C.

ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.

Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production

test capability

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.04/2010

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