IRLS4030-7PPBF [IRF]

HEXFET Power MOSFET; HEXFET功率MOSFET

IRLS4030-7PPBF


型号：	IRLS4030-7PPBF
厂家：	INTERNATIONAL RECTIFIER
描述：	HEXFET Power MOSFET HEXFET功率MOSFET 晶体晶体管功率场效应晶体管开关脉冲
文件：	总9页 (文件大小：289K)
下载：	下载PDF数据表文档文件

IRLS4030PBF

HEXFET Power MOSFET

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103 IRF

IRLS4030PBF

Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, DPAK-3

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0 INFINEON

IRLS4030TRL7PP

Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK- 7

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0 INFINEON

IRLS4030TRLPBF

DC Motor Drive

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46 IRF

IRLS4030TRLPBF

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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0 INFINEON

IRLS510

Power Field-Effect Transistor, 3.6A I(D), 100V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRLS510A

Advanced Power MOSFET

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27 FAIRCHILD

IRLS511

Power Field-Effect Transistor, 3.6A I(D), 80V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRLS520A

Advanced Power MOSFET

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31 FAIRCHILD

IRLS530

Advanced Power MOSFET

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30 FAIRCHILD

IRLS530

Advanced Power MOSFET

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22 FAIRCHILD

IRLS530

Power Field-Effect Transistor, 8.8A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRLS530A

Advanced Power MOSFET

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54 FAIRCHILD

IRLS540

Power Field-Effect Transistor, 12.7A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRLS540A

Advanced Power MOSFET

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42 FAIRCHILD

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