IRLZ24N [IRF]

HEXFET POWER MOSFET; HEXFET功率MOSFET

IRLZ24N


型号：	IRLZ24N
厂家：	INTERNATIONAL RECTIFIER
描述：	HEXFET POWER MOSFET HEXFET功率MOSFET
文件：	总8页 (文件大小：177K)
下载：	下载PDF数据表文档文件

IRLZ24N-002

Power Field-Effect Transistor, 18A I(D), 55V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 INFINEON

IRLZ24NL

TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 18A I(D) | TO-262AA

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30 ETC

IRLZ24NL

HEXFET Power MOSFET

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22 IRF

IRLZ24NLPBF

HEXFET Power MOSFET

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25 IRF

IRLZ24NPBF

Logic-Level Gate Drive, Advanced Process Technology

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13 IRF

IRLZ24NS

HEXFET Power MOSFET

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37 IRF

IRLZ24NS

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

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82 ETC

IRLZ24NS

Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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0 IRF

IRLZ24NSL

Advanced Process Technology

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0 IRF

IRLZ24NSPBF

HEXFET Power MOSFET

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24 IRF

IRLZ24NSTRL

Advanced Process Technology

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0 IRF

IRLZ24NSTRLPBF

Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC PACKAGE-3

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0 IRF

IRLZ24NSTRR

Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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0 IRF

IRLZ24NSTRRPBF

Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC PACKAGE-3

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0 INFINEON

IRLZ24PBF

HEXFET Power MOSFET

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36 IRF

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