OM6041SMV [INFINEON]
Power Field-Effect Transistor, 4A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-3;
| 型号： | OM6041SMV |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 4A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-3 开关 脉冲 晶体管 |
| 文件： | 总4页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
OM6038SM OM6040SM
OM6039SM OM6041SM
POWER MOSFET IN HERMETIC ISOLATED
SURFACE MOUNT PACKAGE
100V Thru 500V, Up To 10 Amp,
N-Channel Power MOSFETs In A
Hermetic Surface Mount Package
FEATURES
• Isolated Hermetic Metal Package
• Fast Switching, Low Drive Current
• Ease of Paralleling For Added Power
• Low RDS(on)
• Available Screened To MIL-S-19500, TX, TXV and S Levels
DESCRIPTION
This series of hermetically packaged surface mount products feature the latest
advanced MOSFET and packaging technology. They are ideally suited for Military
requirements where small size, high performance and high reliability are required,
and in surface mount applications such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers and high energy pulse circuits.
MAXIMUM RATINGS @ TC = 25°C
PART NUMBER
OM6038SM
OM6039SM
OM6040SM
OM6041SM
VDS
RDS(on)
.20Ω
ID
14A
100V
200V
400V
500V
.44Ω
9A
5A
4A
1.05Ω
1.60Ω
SCHEMATIC
PIN CONNECTION
2 Drain
2
3
1
3.5
Pin 1: Source
Pin 2: Drain
Pin 3: Gate
3 Gate
Case: Isolated
1 Source
4 11 R1
Supersedes 1 05 R0
3.5 - 85
OM6038SM - OM6041SM
3.5
3.5 - 86
OM6038SM - OM6041SM
3.5
3.5 - 87
OM6038SM - OM6041SM
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
OM6038
100
OM6039
200
200
± 9
OM6040 OM6041 Units
VDS
Drain-Source Voltage
Drain-Gate Voltage (RGS = 1 MΩ)
400
400
500
500
V
VDGR
100
V
2
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current
± 14
± 7
± 5
± 3
± 4
± 2
A
A
A
2
Continuous Drain Current
± 5
1
Pulsed Drain Current
± 45
50
± 35
50
± 18
50
± 10
50
PD @ TC = 25°C
PD @ TC = 100°C
Junction To Case
Junction To Ambient
TJ
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Linear Derating Factor
Operating and
W
25
25
25
25
W
0.4
0.4
0.4
0.4
W/°C
W/°C
.0125
.0125
.0125
.0125
Tstg
Storage Temperature Range
-55 to 150 -55 to 150 -55 to 150 -55 to 150
225 225 225 225
°C
°C
Lead Solder Temperature (1/16" from case for 5 secs.)
1 Pulse Test: Pulse width ≤ 300 µsec. Duty Cycle ≤ 2%.
2 Package PIN Limitations = 15 Amps
THERMAL RESISTANCE
RthJC
RthJA
Junction-to-Case
2.5
°C/W
°C/W
Junction-to-Ambient
80
Free Air Operation
POWER DERATING
MECHANICAL OUTLINE
.425M
90
75
60
45
30
.100M
.200M
.425M
.035 WIDEM
FLAT 3 PLCS.M
RθJC = 2.5 °C/W
M
M
.350 MIN.M
± .020M
.115M
15
0
3.5
.160M
0
25
50
75 100 125 150 175
.020M
.080 M
TC - CASE TEMPERATURE (°C)
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