RT2N03M [ISAHAYA]

COMPOUND TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE; 与电阻开关应用硅NPN外延型晶体管复合


型号：	RT2N03M
厂家：	ISAHAYA ELECTRONICS CORPORATION
描述：	COMPOUND TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE 与电阻开关应用硅NPN外延型晶体管复合晶体开关晶体管
文件：	总3页 (文件大小：56K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RT2N 03M

COMPOUND TRANSISTOR WITH RESISTOR

FOR SWITCHING APPLICATION

SILICON NPN EPITAXIAL TYPE

OUTLINE DRAWING

Unit:mm

DESCRIPTION

2.1

RT2N03M is a compound transistor with built-in bias resistor

1.25

FEATURE

●Built-in bias resistor ( R1=10 KΩ , R2=10KΩ )

●Mini package for easy mounting

①

②

③

⑤

④

APPLICATION

Inverted circuitꢀ, switching circuit , interface circuit , driver circuit

⑤

④

TERMINAL CONNECTOR

①：BASE１

②：EMITTER（COMMON）

③：BASE２

RTr1

RTr2

④：COLLECTOR２

⑤：COLLECTOR１

R1 R2

R2 R1

JEITA：SC-88A

JEDEC：－

①

②

③

MAXIMUM RATINGS （Ta=25℃）（RTr1、RTr2）

Symbol

V_CBO

Parameter

Collector to Base voltage

Emitter to Base voltage

Ratings

Unit

MARKING

⑤

④

V_EBO

V_CEO

I_C

Collector to Emitter voltage

Collector current

100

℃

I_CM

P_C

Peak Collector current

Collector dissipation（Total Ta=25℃）

Junction temperature

200

150

① ② ③

T_j

＋150

-55～＋150

T_stg

Storage temperature

ISAHAYA ELECTRONICS CORPORATION

RT2N 03M

COMPOUND TRANSISTOR WITH RESISTOR

FOR SWITCHING APPLICATION

SILICON NPN EPITAXIAL TYPE

ELECTRICAL CHARACTERISTICS （Ta=25℃）（RTr1、RTr2）

Limits

Symbol

V_(BR)CEO

Parameter

Test conditions

Unit

Min

Typ

Max

Collector to Emitter break down voltage

Collector cut off current

DC forward current gain

Collector to Emitter saturation voltage

Input on voltage

I_C=100μA，R_BE=∞

V_CB=50V，I_E=0mA

V_CE=5V，I_C=10mA

I_C=10mA，I_B=0.5mA

V_CE=0.2V，I_C=5mA

V_CE=5V，I_C=100μA

μA

CBO

0.1

h_FE

V_CE(sat)

V_I(ON)

V_I(OFF)

R₁

0.1

1.5

1.1

1.0

200

0.3

3.0

Input off voltage

0.8

Input resistor

1.1

KΩ

R₂/R₁

Resistor ratio

0.9

Gain band width product

V_CE=6V，I_E=-10mA

MHz

DCꢀforwardꢀcurrentꢀgainꢀ-ꢀcollectorꢀcurrent

Collectorꢀcurrentꢀ－ꢀInputꢀoffꢀvoltage

1000

100

ꢀhFE

(μA)

100

0.0

0.4

0.8

1.2

1.6

2.0

100

ꢀꢀꢀꢀVI(OFF)(V)

ꢀꢀꢀꢀꢀIC(mA)

Inputꢀonꢀvoltageꢀ－ꢀcollectorꢀcurrent

100

VI(ON)

(V)

100

ꢀꢀꢀꢀIC(mA)

ISAHAYA ELECTRONICS CORPORATION

Marketing division, Marketing planning department

6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan

^Keep·I^sS^aA^fH^etA^yY^fA^irE^stleⁱcⁿtr^yon^oi^ucs^{r c}Cⁱo^rr^cp^uoⁱr^ta^dtio^en^sip^guⁿts^s!the maximum effort into making semiconductor products better and more reliable, but

there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or

property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures

such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or

mishap.

Notes regarding these materials

·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the

customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging

·^IIS^SA^AH^HA^AY^YA^{A o}E^rle^thcⁱt^rr^don^pi^ac^rs^tyC^.orporation assumes no responsibility for any damage, or infringement of any third party's rights ,

·A^orlⁱl^giⁱnⁿf^ao^trⁱm^ngatⁱⁿion^theco^un^st^eain^oe^fd^anin^{y p}th^roes^de^ucm^{t d}a^ate^tari^,a^dlsⁱ,^agin^rc^al^mud^si^,n^cg^hp^ar^ro^tsd^ou^rct^cid^rca^uta^it,^ad^pia^pg^licra^am^tiosⁿa^en^xd^amch^pa^lert^ss,^cr^oeⁿp^tareⁱⁿs^ee^dntⁱⁿin^tf^ho^erm^seat^mio^an^teo^rn^ialp^sr^.oducts

at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice

due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics

Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed

·^hIS^eA^reHⁱⁿA^.YA Electronics Corporation products are not designed or manufactured for use in a device or system that is used

under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an

authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,

·T^suh^ce^hp^ari^sor^aw^ppri^att^re^an^tua^sp^opr^ro^sv^ya^sl^teof^mI^sSA^foH^rA^trY^aA^nsE^pl^oe^rc^tt^ar^to^ionⁿic^,s^veC^hoⁱr^cp^uo^lara^r,ti^mon^edis^icn^ae^l,c^ae^es^rs^oa^sr^py^at^co^er^,eⁿp^uri^cn^lt^eao^rr^,r^oe^rp^uroⁿd^du^ec^rse^ei^an ^rw^eh^po^el^ae^teo^rr^uin^sep^.art these

·I^mf ^ath^tee^rs^iae^lsp^.roducts or technologies are subject to the Japanese export control restrictions, they must be exported under a

license from the Japanese government and cannot be imported into a country other than the approved destination. Any

diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is

·P^prle^oa^hs^ibe^itec^do^.ntact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these

materials or the products contained therein.

Jan.2003

RT2N03M [ISAHAYA]

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