RT3AMMM [ISAHAYA]
Composite Transistor; 复合晶体管型号: | RT3AMMM |
厂家: | ISAHAYA ELECTRONICS CORPORATION |
描述: | Composite Transistor |
文件: | 总4页 (文件大小:134K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PRELIMINARY
RT3AMMM
Composite Transistor
For Low Frequency Amplify Application
Silicon Pnp Epitaxial Type
OUTLINE DRAWING
Unit:mm
DESCRIPTION
RT3AMMM is a composite transistor built with two
2.1
2SA1235A chips in SC-88 package.
1.25
FEATURE
Silicon pnp epitaxial type
①
②
③
⑥
⑤
④
Each transistor elements are independent.
Mini package for easy mounting
APPLICATION
For low frequency amplify application
TERMINAL
CONNECTOR
①:EMITTER1
②:BASE1
③:COLLECTOR2
④:EMITTER2
⑤:BASE2
Tr1
Tr2
⑥:COLLECTOR1
JEITA:SC-88
MAXIMUM RATING (Ta=25℃)
SYMBOL
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
RATING
-60
UNIT
V
MARKING
V
CBO
V
EBO
V
CEO
-6
V
6
5
4
-50
V
-200
mA
mW
℃
I
C
AMM
Collector dissipation(Total,Ta=25℃)
Junction temperature
150
P
T
T
C
.
+125
-55~+125
j
℃
Storage temperature
stg
1
2
3
PRELIMINARY
RT3AMMM
Composite Transistor
For Low Frequency Amplify Application
Silicon Pnp Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Limits
Symbol
Parameter
Test conditions
I =100μA,R =∞
Unit
Min
Typ
Max
-
Collector to Emitter break down voltage
Collector cut off current
-50
-
V
μA
μA
-
V
(BR)CEO
C
BE
-
-
-0.1
-0.1
500
-
I
I
V
=-60V,I =0
CBO
CB
EB
CE
CE
E
Emitter cut off current
-
-
V
V
V
=-6V,IC=0
EBO
DC forward current gain
DC forward current gain
Collector to Emitter saturation voltage
Gain band width product
Collector output capacitance
Noise figure
150
-
-
h
h
*
=-6V,I =-1mA
C
FE
FE
90
-
-
=-6V,I =-0.1mA
C
-
-0.3
-
V
V
I =-100mA,I =-10mA
C B
CE(sat)
-
200
4.0
-
f
V
=-6V,I =10mA
MH
pF
T
CE
CB
CE
E
Z
-
-
C
V
V
=-6V,I =0,f=1MH
E Z
ob
NF
-
20
dB
=6V,I =0.3mA,f=100H ,R =10kΩ
E
Z
G
* : It shows hFE classification in right table.
item
E
F
150~300
250~500
h
FE
PRELIMINARY
RT3AMMM
Composite Transistor
For Low Frequency Amplify Application
Silicon Pnp Epitaxial Type
COMMON EMITTER OUTPUT
COMMON EMITTER TRANSFER
-50
-40
-30
-20
-10
-0
-50
0.18mA
Ta=25℃
0.16mA
Ta=25℃
VCE=-6V
0.14mA
-40
-30
-20
-10
-0
0.12mA
0.10mA
0.08mA
0.06mA
0.04mA
0.02mA
IB=0
-0
-1
-2
-3
-4
-5
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
BASE TO EMITTER VOLTAGE VBE(V)
COLLECTOR EMITTER VOLTAGE VCE(V)
GAIN BAND WIDTH PRODUCT
VS. EMITTER CURRENT
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
10000
1000
100
10
250
Ta=25℃
Ta=25℃
VCE=-6V
VCE=-6V
100(@IC=-1mA)
200
150
100
50
0
1
0.1
1
10
100
-0.1
-1
-10
-100
-1000
EMITTER CURRENT IE(mA)
COLLECTOR CURRENT IC(mA)
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
100
Ta=25℃
IE=0
f=1MHz
10
1
0.1
-0.1
-1
-10
-100
COLLECTOR TO BASE VOLTAGE VCB(V)
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
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such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
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Jan.2003
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