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2N3772 [ISC]

isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
2N3772
型号： 2N3772
厂家： INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：

isc Silicon NPN Power Transistor
ISC的硅NPN功率晶体管

晶体 晶体管 局域网
文件： 总2页 (文件大小：169K)
中文：  中文翻译
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INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2N3772  
DESCRIPTION  
·Excellent Safe Operating Area  
·High DC Current Gain-hFE=15(Min)@IC = 10A  
·Low Saturation Voltage-  
: VCE(sat)= 1.4V(Max)@ IC = 10A  
APPLICATIONS  
·Designed for linear amplifiers, series pass regulators, and  
inductive switching applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)  
SYMBOL  
VCBO  
VCEX  
VCEO  
VEBO  
IC  
PARAMETER  
VALUE  
100  
80  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
60  
V
7
V
Collector Current-Continuous  
Collector Current-Peak  
Base Current-Contnuous  
Base Current-Peak  
20  
A
ICM  
30  
A
IB  
5
A
IBM  
15  
A
PC  
Collector Power Dissipation @TC=25℃  
Junction Temperature  
150  
200  
-65~200  
W
℃
℃
TJ  
Storage Temperature  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
1.17  
℃/W  
Rth j-c  
isc Website：www.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2N3772  
ELECTRICAL CHARACTERISTICS  
TC=25℃ unless otherwise specified  
SYMBOL  
VCEO(SUS)  
VCEX(SUS)  
VCER(SUS)  
VCE  
PARAMETER  
CONDITIONS  
MIN  
60  
MAX  
UNIT  
V
Collector-Emitter Sustaining Voltage IC= 200mA ; IB= 0  
Collector-Emitter Sustaining Voltage  
80  
V
IC= 200mA ; VBE( )= 1.5V; RBE=100Ω  
off  
Collector-Emitter Sustaining Voltage IC= 200mA ; RBE= 100Ω  
70  
V
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
Collector Cutoff Current  
Collector Cutoff Current  
Collector Cutoff Current  
Emitter Cutoff Current  
IC= 10A; IB= 1A  
IC= 20A; IB= 4A  
IC= 10A ; VCE= 4V  
VCE= 50V; IB= 0  
1.4  
4.0  
2.2  
10  
V
-1  
(sat)  
V
VCE  
-2  
(sat)  
V
VBE(  
)
on  
ICEO  
mA  
mA  
mA  
mA  
VCE= 100V; VBE)= .5V  
5.0  
10  
ff  
ICEV  
ICBO  
IEBO  
hFE-1  
hFE-2  
fT  
VE= 45V; VBE( )= 1.5V,TC=150℃  
off  
VCB= 100V; IE= 0  
VEB= 7V; IC=0  
5.0  
5.0  
60  
DC Current Gain  
IC= 10A ; VCE= 4V  
IC= 20A ; VCE= 4V  
15  
5
DC Current Gain  
Current-Gain—Bandwidth Product  
0.2  
2.5  
MHz  
A
IC= 1A ; VCE= 4V ;ftest= 50kHz  
VCE= 60V,t= 1.0s,Nonrepetitive  
Second Breakdown Collector  
Current with Base Forward Biased  
Is/b  
2
isc Website：www.iscsemi.cn  

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