2SC3257 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC3257 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3257
DESCRIPTION
·With TO-220 package
·High collector breakdown voltage
·Excellent switching times
APPLICATIONS
·Switching regulator and high voltage
switching applications
·High speed DC-DC converter applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
250
200
7
UNIT
V
Open emitter
Open base
V
Open collector
V
10
A
ICM
Collector current-peak
Base current
15
A
IB
2
A
TC=25℃
Ta=25℃
1.5
PC
Collector power dissipation
W
40
Tj
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3257
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
200
250
TYP.
MAX
UNIT
V
IC=10mA ;IB=0
IC=1mA ;IE=0
V
IC=5A;IB=0.5A
IC=5A;IB=0.5A
VCB=200V;IE=0
VEB=7V; IC=0
1.0
1.5
100
1.0
V
V
μA
mA
IEBO
Emitter cut-off current
hFE-1
DC current gain
IC=10mA ; VCE=5V
IC=5A ; VCE=5V
15
20
hFE-2
DC current gain
80
Switching times
tr
ts
tf
Rise time
1.0
2.5
1.0
μs
μs
μs
IB1=-IB2=0.6A;VCC≈150V
RL=25Ω
Storage time
Fall time
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3257
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
相关型号：
2SC3258O
TRANSISTOR 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB, BIP General Purpose Power
TOSHIBA
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