2SC5198O135 [ISC]
Transistor;
| 型号： | 2SC5198O135 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：287K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC5198
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Min) @IC= 7A
·Good Linearity of hFE
·Complement to Type 2SA1941
APPLICATIONS
·Power amplifier applications
·Recommend for 70W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
140
140
5
UNIT
V
V
V
Collector Current-Continuous
Base Current-Continuous
10
A
IB
1
A
Collector Power Dissipation
@ TC=25℃
PC
100
150
-55~150
W
℃
℃
TJ
Junction Temperature
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC5198
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Emitter Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
V(BR)CEO
IC= 50mA ; IB= 0
140
V
IC= 7A; IB= 0.7A
2.0
1.5
5
V
VCE
(sat)
IC= 5A ; VCE= 5V
VCB= 140V ; IE=0
VEB= 5V; IC=0
V
VBE(
)
on
ICBO
μA
μA
IEBO
hFE-1
hFE-2
COB
fT
5
DC Current Gain
IC= 1A ; VCE= 5V
IC= 5A ; VCE= 5V
IE=0 ; VCB= 10V;ftest= 1.0MHz
IC= 1A ; VCE= 5V
55
35
160
DC Current Gain
Output Capacitance
170
30
pF
Current-Gain—Bandwidth Product
MHz
hFE-1 Classifications
R55
R65
R75
R85
55-65
65-75
75-85
85-95
O95
O105
O115
O125
O135
O145
O155
95-105
105-115
115125
125-135
135-145
145-155
155-160
2
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC5198
isc Website：www.iscsemi.cn
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