2SD1456 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD1456 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1456
DESCRIPTION
·With TO-3PN package
·High voltage,high speed
·Built-in damper diode
APPLICATIONS
·For TV horizontal deflection output
applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PN) and symbol
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VEBO
IC
PARAMETER
Collector-base voltage
Emitter-base voltage
CONDITIONS
Open emitter
VALUE
1500
6
UNIT
V
Open collector
V
Collector current (DC)
Collector power dissipation
Junction temperature
Storage temperature
6
A
PC
TC=25℃
50
W
Tj
150
℃
℃
Tstg
-45~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1456
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
Emitter-base breakdown voltage
IE=200mA; IC=0
6
V
Collector-emitter saturation voltage IC=5A; IB=1A
5.0
1.5
0.5
V
V
Base-emitter saturation voltage
Collector cut-off current
DC current gain
IC=5A; IB=1A
VCB=1500V; IE=0
IC=1A ; VCE=5V
IF=6A
mA
hFE
6
VF
Diode forward voltage
2.2
V
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1456
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
相关型号：
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