2SD2059R [ISC]
Transistor;
| 型号： | 2SD2059R |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2059
DESCRIPTION
·With TO-220F package
·Complement to type 2SB1367
·Low collector saturation voltage:
V
CE(SAT)=2.0V(Max) at IC=4A,IB=0.4A
·Collector power dissipation:
PC=30W(TC=25℃)
APPLICATIONS
·With general purpose applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
3
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
100
100
5
UNIT
V
Open base
V
Open collector
V
5
A
IB
Base current
0.5
A
PC
Collector dissipation
Junction temperature
Storage temperature
TC=25℃
30
W
℃
℃
Tj
150
-55~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2059
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBE
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
IC=50mA ;IB=0
MIN
TYP
MAX
UNIT
V
100
IC=4A ;IB=0.4A
IC=1A;VCE=5V
VCB=100V;IE=0
VEB=5V; IC=0
2.0
1.5
0.1
1.0
240
V
V
ICBO
mA
mA
IEBO
hFE-1
hFE-2
fT
DC current gain
IC=1A ; VCE=5V
IC=4A ; VCE=5V
IC=1A ; VCE=5V
f=1MHz;VCB=10V
40
20
DC current gain
Transition frequency
12
MHz
pF
COB
Collector output capacitance
100
hFE-1 Classifications
R
O
Y
40-80
70-140
120-240
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2059
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2059
4
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