2SD732 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | 2SD732 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD732
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V (Min)
·High Current Capability
·Complement to Type 2SB696
APPLICATIONS
·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
MAX
150
120
6
UNIT
V
V
V
Collector Current-Continuous
Collector Current-Peak
8
A
ICM
12
A
Collector Power Dissipation
@TC=25℃
PC
80
W
℃
℃
Tj
Junction Temperature
150
-40~150
Tstg
Storage Temperature Range
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD732
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
PARAMETER
CONDITIONS
MIN
120
150
6
TYP. MAX UNIT
Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞
V
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC= 5mA; IE= 0
IE= 5mA; IC= 0
IC= 5A; IB= 0.5A
IC= 1A; VCE= 5V
VCB= 80V; IE= 0
VEB= 4V; IC= 0
IC= 1A; VCE= 5V
IC= 1A; VCE= 5V
0.6
V
V
VCE
(sat)
1.5
0.1
0.1
320
VBE
(on)
ICBO
Collector Cutoff Current
mA
mA
IEBO
hFE
fT
Emitter Cutoff Current
DC Current Gain
40
Current-Gan—Bandwidth Product
15
MHz
hFE Classifications
C
D
E
F
40-80
60-120
100-200 160-320
isc Website：www.iscsemi.cn
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