2SD745S [ISC]
Transistor;
| 型号： | 2SD745S |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor 局域网 放大器 晶体管 |
| 文件： | 总3页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD745/745A/745B
DESCRIPTION
·
·With MT-200 package
·Complement to type 2SB705/705A/705B
APPLICATIONS
·Audio frequency power amplifier
·Suitable for output stages of 60~120W audio
amplifiers and voltage regulators
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (MT-200) and symbol
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
140
150
160
140
150
160
5
UNIT
2SD745
VCBO
Collector-base voltage
Open emitter
V
2SD745A
2SD745B
2SD745
VCEO
Collector-emitter voltage
Open base
V
2SD745A
2SD745B
VEBO
IC
Emitter-base voltage
Collector current
Open collector
V
A
10
ICM
PT
Collector current-peak
Total power dissipation
Junction temperature
Storage temperature
15
A
TC=25℃
120
150
-55~150
W
℃
℃
Tj
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD745/745A/745B
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
140
150
160
TYP.
MAX
UNIT
2SD745
Collector-emitter
breakdown voltage
V(BR)CEO
IC=25mA; IB=0
V
2SD745A
2SD745B
VCEsat
VBEsat
ICBO
IEBO
hFE-1
hFE-2
fT
Collector-emitter saturation voltage IC=5A;IB=0.5 A
1.5
2.0
50
V
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=5A;IB=0.5 A
V
VCB=140V; IE=0
VEB=3V; IC=0
μA
μA
50
IC=50mA ; VCE=5V
IC=2A ; VCE=5V
IC=0.2A ; VCE=5V
IE=0; VCB=10V;f=1MHz
20
40
DC current gain
200
Transition frequency
Output capacitance
15
MHz
pF
COB
270
hFE-2 classifications
S
R
Q
40-80
60-120
100-200
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD745/745A/745B
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
相关型号：
©2020 ICPDF网 联系我们和版权申明