BD142 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BD142 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD142
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High dissipation rating
APPLICATIONS
·LF large signal power amplification
·Intended for a wide variety of intermediate
power applications.
·Suited for use in audio and inverter circuits
at 12V
PINNING (See Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
3
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
UNIT
V
45
Open base
45
7
V
Open collector
V
15
A
IB
Base current
7
A
PT
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
117
W
℃
℃
Tj
-65~200
-65~200
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance from junction to case
MAX
UNIT
Rth j-c
1.5
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD142
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBE
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
CONDITIONS
MIN
45
45
7
TYP.
MAX
UNIT
V
IC=200mA ;IB=0
IC=1mA ;IE=0
V
IE=1mA ;IC=0
V
IC=4A ;IB=0.4A
IC=4A;VCE=4V
VCE=100V;VBE=-1.5V
VEB=7V; IC=0
1.1
1.5
2
V
V
ICEX
Collector cut-off current
mA
mA
IEBO
Emitter cut-off current
1
hFE-1
DC current gain
IC=4A ; VCE=4V
IC=0.5A ; VCE=4V
12.5
20
160
hFE-2
DC current gain
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD142
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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