BD237 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BD237 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD233 BD235 BD237
DESCRIPTION
·
·With TO-126 package
·Complement to type BD234 /236 /238
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
BD233
BD235
BD237
BD233
BD235
BD237
45
60
VCBO
Collector-base voltage
Open emitter
Open base
V
100
45
VCEO
Collector-emitter voltage
V
60
80
VEBO
IC
Emitter -base voltage
Collector current (DC)
Collector current-Peak
Collector power dissipation
Junction temperature
Storage temperature
Open collector
5
V
A
2
ICM
PC
Tj
6
A
TC=25℃
25
W
℃
℃
150
-65~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD233 BD235 BD237
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEsat
PARAMETER
Collector-emitter saturation voltage
Base-emitter on voltage
BD233
CONDITIONS
MIN
TYP.
MAX
0.6
UNIT
V
IC=1A; IB=0.1A
VBE
IC=1A ; VCE=2V
1.3
V
45
60
80
Collector-emitter
BD235
VCEO(SUS)
IC=0.1A; IB=0
V
sustaining voltage
BD237
BD233
VCB=45V; IE=0
ICBO
Collector cut-off current
100
μA
BD235
BD237
VCB=60V; IE=0
VCB=100V; IE=0
VEB=5V; IC=0
IEBO
hFE-1
hFE-2
fT
Emter cut-off current
DC current gain
1
mA
IC=150mA ; VCE=2V
IC=1A ; VCE=2V
IC=250mA; VCE=10V
40
25
3
DC current gain
Transition frequency
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD233 BD235 BD237
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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