BD375-6 [ISC]
Transistor;
| 型号： | BD375-6 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor 局域网 开关 晶体管 |
| 文件： | 总2页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BD375/377/379
DESCRIPTION
·DC Current Gain-
: hFE= 20(Min)@ IC= 1A
·Complement to Type BD376/378/380
APPLICATIONS
·Designed for medium power linear and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD375
BD377
BD379
BD375
BD377
BD379
50
75
VCBO
Collector-Base Voltage
V
100
45
VCEO
Collector-Emitter Voltage
Emitter-Base Voltage
V
60
80
VEBO
IC
ICM
IB
5
V
A
Collector Current-Continuous
Collector Current-Peak
2
3
A
Base Current-Continuous
1
A
Collector Power Dissipation
@ TC=25℃
PC
TJ
25
W
℃
℃
Junction Temperature
150
-55~150
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BD375/377/379
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
45
TYP.
MAX UNIT
BD375
BD377
BD379
BD375
BD377
BD379
Collector-Emitter
Sustaining Voltage
VCEO(SUS)
IC= 100mA ; IB= 0
V
60
80
50
VCBO
Collector-Base Voltage
IC= 0.1mA ; IE= 0
V
75
100
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
BD375
IC= 1A; IB= 0.1A
IC= 1A; VCE= 2V
VCB= 45V; IE= 0
VCB= 60V; IE= 0
VCB= 80V; IE= 0
VEB= 5V; IC= 0
1.0
1.5
2
V
V
VCE(
)
sat
VBE(
)
on
ICBO
Collector Cutoff Current
μA
BD377
BD379
2
2
IEBO
hFE-1
hFE-2
Emitter Cutoff Current
DC Current Gain
0.1
375
mA
IC= 0.15A ; VCE= 2V
IC= 1A; VCE= 2V
40
20
DC Current Gain
Switching Times
Turn-On Time
Turn-Off Time
0.05
0.5
μs
μs
ton
toff
IC= 0.5A; IB1= -IB2= 50mA;
VCC= 30V
hFE-1 Classifications
6
10
16
25
40-100
63-160
100-250 150-375
2
isc Website：www.iscsemi.cn
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