BD634 [ISC]
Silicon PNP Power Transistor; 硅PNP功率晶体管
| 型号： | BD634 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon PNP Power Transistor |
| 文件： | 总2页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BD634
DESCRIPTION
·DC Current Gain -
: hFE = 40(Min.)@ IC= -25mA
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -45V(Min.)
·Complement to Type BD633
APPLICATIONS
·Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
-45
UNIT
V
-45
V
-5
V
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
-2
A
ICM
-5
A
IB
-0.3
2
A
Collector Power Dissipation
@ Ta=25℃
PC
W
Collector Power Dissipation
@ TC=25℃
30
TJ
Junction Temperature
150
-55~150
℃
℃
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BD634
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCE(
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
CONDITIONS
MIN
-45
-45
-5
MAX
UNIT
V
IC= -30mA; IB= 0
IC= -0.1mA; IE= 0
IE= -1mA; IC= 0
V
V
IC= -1A; IB= -0.1A
IC= -1A; VCE= -2V
VCE= -45V; VBE= 0
IC= -25mA; VC-2
IC= -1A; VCE= -2V
-0.6
-1.3
-0.2
V
)
sat
V
VBE(
)
on
ICES
Collector Cutoff Current
mA
hFE-1
DC Current Gain
40
25
hFE-2
DC Current Gain
2
isc Website：www.iscsemi.cn
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