BD940 [ISC]
isc Silicon PNP Power Transistor; ISC的硅PNP功率晶体管
| 型号： | BD940 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon PNP Power Transistor |
| 文件： | 总2页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BD934/936/938/940/942
DESCRIPTION
·DC Current Gain-
: hFE= 40(Min)@ IC= -150mA
·Complement to Type BD933/935/937/939/941
APPLICATIONS
·Designed for use in output stages of audio and television
amplifier circuits where high peak powers can occur.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
-45
UNIT
BD934
BD936
BD938
BD940
BD942
BD934
BD936
BD938
BD940
BD942
-60
VCBO
Collector-Base Voltage
V
-100
-120
-140
-45
-60
VCEO
Collector-Emitter Voltage
Emitter-Base Voltage
V
-80
-100
-120
-5
VEBO
IC
ICM
IB
V
A
Collector Current-Continuous
Collector Current-Peak
-3
-7
A
Base Current-Continuous
-0.5
30
A
Collector Power Dissipation
@ TC=25℃
PC
TJ
W
℃
℃
Junction Temperature
150
-65~150
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
℃/W
℃/W
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
4.17
70
Rth j-c
Rth j-a
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BD934/936/938/940/942
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE(
PARAMETER
CONDITIONS
MIN
-45
TYP.
MAX UNIT
BD934
BD936
BD938
BD940
BD942
-60
Collector-Emitter
Sustaining Voltage
IC= -100mA ; IB= 0
V
-80
-100
-120
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
IC= -1A; IB= -0.1A
IC= -1A; VCE= -2V
-0.6
-1.3
V
)
sat
V
VBE(
)
on
V
CB= VCBOmax; IE= 0
VCB= VCBOmax; IE= 0,TJ=150℃
-0.05
-1
ICBO
mA
mA
mA
ICEO
IEBO
hFE-1
hFE-2
fT
VCE= VCEOmax; IB= 0
-0.1
-0.2
250
VEB= -5V; IC= 0
DC Current Gain
IC= -150mA ; VCE= -2V
IC= -1A ; VCE= -2V
IC= -250mA ; VCE= -10V
40
25
3
DC Current Gain
Current-Gain—Bandwidth Product
MHz
Switching Times
Turn-On Time
0.2
0.7
0.6
2.4
μs
μs
ton
IC= -1.0A; IB1= -IB2= -0.1A
Turn-Off Time
toff
2
isc Website：www.iscsemi.cn
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