BFQ540 [ISC]
isc Silicon NPN RF Transistor; ISC的硅NPN晶体管RF
| 型号： | BFQ540 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN RF Transistor |
| 文件： | 总3页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
iscRF Product Specification
isc Silicon NPN RF Transistor
BFQ540
DESCRIPTION
·High Gain
·High Output Voltage
·Low Noise
APPLICATIONS
·Designed for use in VHF, UHF and CATV amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCES
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
20
UNIT
V
15
V
2
V
Collector Current-Continuous
120
mA
W
Collector Power Dissipation
@TC=25℃
PC
1.2
TJ
Junction Temperature
175
℃
℃
Storage Temperature Range
-65~150
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
iscRF Product Specification
isc Silicon NPN RF Transistor
BFQ540
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
CONDITIONS
MIN
15
20
2
TYP.
MAX
UNIT
V
IC= 40μA ; RBE= 0
IC= 10μA ; IE= 0
V
IE= 100μA ; IC= 0
V
VCB= 8V; IE= 0
0.05
0.2
μA
μA
IEBO
VEB= 1V; IC= 0
hFE
DC Current Gain
IC= 40mA ; VCE= 8V
60
250
fT
Current-Gain—Bandwidth Product
Feedback Capacitance
IC= 40mA ; VCE= 8V; f= 1GHz
IE= 0 ; VCB= 8V; f= 1MHz
IC= 40mA ; VCE= 8V; f= 900MHz
IC= 40mA ; VCE= 8V; f= 900MHz
9
GHz
pF
0.9
13
1.9
Cre
︱S21e︱2
Insertion Power Gain
12
dB
NF
Noise Figure
2.4
dB
2
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
iscRF Product Specification
isc Silicon NPN RF Transistor
BFQ540
isc Website：www.iscsemi.cn
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