BFQ540_07 [NXP]
NPN wideband transistor; NPN宽带晶体管型号: | BFQ540_07 |
厂家: | NXP |
描述: | NPN wideband transistor |
文件: | 总8页 (文件大小:67K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BFQ540
NPN wideband transistor
Product specification
2000 May 23
Supersedes data of 1998 Aug 27
Philips Semiconductors
Product specification
NPN wideband transistor
BFQ540
FEATURES
DESCRIPTION
• High gain
NPN wideband transistor in a SOT89
plastic package.
• High output voltage
• Low noise
page
PINNING
• Gold metallization ensures
excellent reliability
PIN
DESCRIPTION
emitter
1
2
3
• Low thermal resistance.
1
2
3
Bottom view
MBK514
collector
base
APPLICATIONS
• VHF, UHF and CATV amplifiers.
Marking code: N4.
Fig.1 SOT89.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
VCBO
VCES
VEBO
IC
collector-base voltage
collector-emitter voltage
collector-base voltage
collector current (DC)
total power dissipation
DC current gain
open emitter
RBE = 0
−
−
20
15
2
V
−
−
V
open collector
−
−
V
−
−
120
1.2
250
−
mA
W
Ptot
hFE
fT
Ts ≤ 60 °C; note 1
−
−
IC = 40 mA; VCE = 8 V; Tj = 25 °C
100
−
120
9
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C
GHz
dB
insertion power gain
noise figure
IC = 40 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
12
13
−
2
s21
F
IC = 40 mA; VCE = 8 V;
−
1.9
2.4
dB
f = 900 MHz; ΓS = Γopt
Note
1. Ts is the temperature at the soldering point of the collector pin.
2000 May 23
2
Philips Semiconductors
Product specification
NPN wideband transistor
BFQ540
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCBO
VCES
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
open emitter
RBE = 0
−
20
15
2
V
−
V
open collector
−
V
collector current (DC)
total power dissipation
storage temperature
−
120
1.2
mA
W
Ptot
Tstg
Tj
Ts ≤ 60 °C
−
−65
−
+150 °C
operating junction temperature
175
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
95
UNIT
Rth j-s
thermal resistance from junction
to soldering point
Ts ≤ 60 °C; Ptot = 1.2 W
K/W
MBG241
MBG244
3
1.4
10
P
handbook, halfpage
tot
(W)
1.2
I
C
(mA)
1.0
0.8
0.6
0.4
0.2
2
10
0
0
10
1
2
50
100
150
200
o
10
10
T ( C)
j
V
(V)
CE
VCE ≤ 9 V.
Fig.2 Power derating curve.
Fig.3 SOAR.
2000 May 23
3
Philips Semiconductors
Product specification
NPN wideband transistor
BFQ540
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
20
TYP. MAX. UNIT
V(BR)CBO collector-base breakdown voltage
open emitter; IC = 10 µA; IE = 0
−
−
V
V(BR)CES
collector-emitter breakdown voltage RBE = 0; IC = 40 µA
15
2
−
−
V
V(BR)EBO emitter-base breakdown voltage
IE = 100 µA; IC = 0
VCB = 8 V; IE = 0
−
−
V
ICBO
IEBO
hFE
fT
collector-base leakage current
emitter-base leakage current
DC current gain
−
−
50
200
250
−
nA
nA
VCB = 1 V; IC = 0
−
−
IC = 40 mA; VCE = 8 V
100
−
120
9
transition frequency
IC = 40 mA; VCE = 8 V;
fm = 1 GHz
GHz
Ce
emitter capacitance
feedback capacitance
insertion power gain
IC = ie = 0; VEB = 0.5 V; f = 1 MHz
IC = 0; VCE = 8 V; f = 1 MHz
−
2
−
−
−
pF
pF
dB
Cre
−
0.9
13
IC = 40 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
12
2
s21
Vo
output voltage
note 1
note 2
note 3
−
−
−
500
350
−
−
mV
mV
dB
−
d2
F
second order intermodulation
distortion
−53
noise figure
IC = 40 mA; VCE = 8 V;
−
1.9
2.4
dB
f = 900 MHz; ΓS = Γopt
Notes
1. dim = −60 dB (DIN45004B); VCE = 8 V; IC = 40 mA; RL = 50 Ω;
Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.5 MHz;
measured at fp + fq − fr = 793.25 MHz.
2. dim = −60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; RL = 50 Ω;
Vp = Vq = Vo; fp = 806 MHz; fq = 810 MHz;
measured at 2fp − fq = 802 MHz.
3. IC = 40 mA; VCE = 8 V; RL = 50 Ω;
Vp = Vq = 225 mV; fp = 250 MHz; fq = 560 MHz;
measured at fp + fq = 810 MHz.
2000 May 23
4
Philips Semiconductors
Product specification
NPN wideband transistor
BFQ540
MRA688
MRA689
12
1.0
handbook, halfpage
handbook, halfpage
C
re
(pF)
f
T
(GHz)
0.8
V
V
= 8V
= 4V
CE
CE
8
0.6
0.4
0.2
0
4
0
0
4
8
12
−1
2
V
(V)
10
1
10
10
CB
I
(mA)
C
IC = 0; f = 1 MHz.
f = 1 GHz; Tamb = 25 °C.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5 Transition frequency as a function of
collector current; typical values.
MBG242
MBG243
20
20
handbook, halfpage
handbook, halfpage
d
2
d
im
(dB)
(dB)
30
30
40
50
40
50
60
70
60
70
10
20
30
40
50
60
(mA)
10
20
30
40
50
60
(mA)
I
I
C
C
VCE = 8 V; Vo = 225 mV; RL = 50 Ω; fp + fq = 810 MHz;
Tamb = 25 °C.
VCE = 8 V; Vo = 475 mV; RL = 50 Ω.
fp + fq − fr = 793.25 MHz; Tamb = 25 °C.
Fig.7 Second order intermodulation distortion as
a function of collector current; typical
values.
Fig.6 Intermodulation distortion as a function of
collector current; typical values.
2000 May 23
5
Philips Semiconductors
Product specification
NPN wideband transistor
BFQ540
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
A
D
b
3
E
L
H
E
1
2
3
c
b
2
w
M
b
1
e
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
L
min.
UNIT
A
b
b
b
c
D
E
e
e
H
E
w
1
2
3
1
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.37
4.6
4.4
2.6
2.4
4.25
3.75
mm
3.0
1.5
0.8
0.13
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT89
TO-243
SC-62
2000 May 23
6
Philips Semiconductors
Product specification
NPN wideband transistor
BFQ540
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
STATUS
DEFINITIONS (1)
Objective specification
Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 May 23
7
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613516/03/pp8
Date of release: 2000 May 23
Document order number: 9397 750 07064
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