BU2522AF [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BU2522AF |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2522AF
DESCRIPTION
·With TO-3PFa package
·High voltage
·High speed switching
APPLICATIONS
·For use in horizontal deflection circuits
of high resolution monitors.
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
3
Absolumamum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
IC
PARAMETER
Collector-base voltage
Collector-emitter oltage
Collector current (DC)
Collector current-peak
Base Collector current (DC)
Base current-peak
CONDITNS
Open emitter
VALUE
1500
800
10
UNIT
V
Open base
V
A
ICM
25
A
IB
6
A
IBM
9
A
Ptot
Total power dissipation
Max.operating junction temperature
Storage temperature
TC=25℃
45
W
℃
℃
Tj
150
-65~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2522AF
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
VCEsat
VBEsat
ICES
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
IC=0.1A ;IB=0;L=25mH
IE=1mA ;IC=0
MIN
800
7.5
TYP.
MAX
UNIT
V
13.5
V
IC=6.0A ;IB=1.2A
IC=6.0A ;IB=1.2A
5.0
1.3
V
V
VCE=BVCES; VBE=0
Tj=125℃
0.25
2.0
mA
mA
IEBO
Emitter cut-off current
VEB=7.5V; IC=0
0.25
hFE-1
DC current gain
IC=1A ; VCE=5V
10
7
hFE-2
DC current gain
IC=6A ; VCE=5V
5
8
CC
Collector capacitance
IE=0 ; VCB=10V; f=1MHz
115
pF
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2522AF
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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