BU2522DF [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | BU2522DF |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU2522DF
DESCRIPTION
·High Switching Speed
·High Voltage
·Built-in Ddamper Ddiode
APPLICATIONS
·Designed for use in horizontal deflection circuits of
high resolution monitors.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
1500
800
7.5
UNIT
V
V
V
Collector Current-Continuous
Collector Current-peak
Base Current-Continuous
Base Current-peak
10
A
ICM
25
A
IB
6
A
IBM
9
A
Collector Power Dissipation
@TC=25℃
PC
45
W
℃
℃
Tj
Junction Temperature
150
-65~150
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance, Junction to Case
2.8
K/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU2522DF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
PARAMETER
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
IC= 100mA ;IB= 0,L= 25mH
IE= 600mA ;IC= 0
MIN
800
7.5
TYP. MAX UNIT
V
13.5
V
V
IC= 6A ;IB= 1.2A
5.0
1.3
VCE
VBE
(sat)
IC= 6A ;IB= 1.2A
V
(sat)
VCE= BVCES; VBE= 0
0.25
2.0
ICES
mA
mA
VCE= BVCES; VBE= 0;TC=125℃
IEBO
hFE-1
hFE-2
VECF
COB
Emitter Cutoff Current
VEB= 7.5V; IC= 0
100
300
DC Current Gain
IC= 1A ; VCE= 5V
IC= 6A ; VCE= 5V
IF= 6A
10
DC Current Gain
5
8
C-E Diode Forward Voltage
Output Capacitance
2.0
V
115
pF
IE= 0 ; VCB= 10V;ftest= 1MHz
isc Website：www.iscsemi.cn
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