BU2525DX [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | BU2525DX |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU2525DX
DESCRIPTION
·High Switching Speed
·High Voltage
·Built-in Ddamper Ddiode
APPLICATIONS
·Designed for use in horizontal deflection circuits of
large screen color TV receivers
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
1500
800
7.5
UNIT
V
V
V
Collector Current-Continuous
Collector Current-peak
Base Current-Continuous
Base Current-peak
12
A
ICM
30
A
IB
8
A
IBM
12
A
Collector Power Dissipation
@TC=25℃
PC
45
W
℃
℃
Tj
Junction Temperature
150
-55~150
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance, Junction to Case
2.8
K/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU2525DX
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP. MAX UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA; IB= 0, L= 25mH
800
V
V(BR)EBO
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
IE= 600mA; IC= 0
IC= 8A; IB= 1.6A
IC= 8A; IB= 1.6A
7.5
V
5.0
1.1
V
V
VCE
VBE
(sat)
(sat)
VCE= BVCES; VBE= 0
VCE= BVCES; VBE= 0;TC=125℃
1.0
2.0
ICES
mA
mA
IEBO
hFE-1
hFE-2
VECF
COB
VEB= 6V; IC= 0
72
5
218
DC Current Gain
IC= 1A; VCE= 5V
IC= 8A; VCE= 5V
IF= 8A
11
7
DC Current Gain
9.5
2.0
C-E Diode Forward Voltage
Output Capacitance
V
145
pF
IE= 0 ; VCB= 10V;ftest= 1MHz
Switching times
Storage Time
4.0
μs
μs
tstg
IC= 8A , IB( )= 1.1A; LB= 2.5μH
-VBB= 4V; (-dIB/dt= 1.6A/μs)
end
Fall Time
0.35
tf
isc Website：www.iscsemi.cn
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