BU2527AF [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BU2527AF |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2527AF
DESCRIPTION
·
·With TO-3PFa package
·High voltage
·High speed switching
APPLICATIONS
·For use in horizontal deflection circuits
of high resolution monitors
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
3
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-peak
Base current (DC)
CONDITIONS
VALUE
1500
800
7.5
UNIT
V
Open emitter
Open base
V
Open collector
V
12
A
ICM
30
A
IB
8
A
IBM
Base current-peak
12
A
Ptot
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
45
W
℃
℃
Tj
150
-65~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2527AF
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
VCEsat
VBEsat
ICES
PARAMETER
CONDITIONS
MIN
800
7.5
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH
Emitter-base breakdown voltage
IE=1mA ;IC=0
V
Collector-emitter saturation voltage IC=6A ;IB=1.2A
5.0
1.3
V
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=6A ;IB=1.2A
V
VCE=BVCES; VBE=0
Tj=125℃
0.25
2.0
mA
mA
IEBO
VEB=7.5V; IC=0
0.25
hFE-1
IC=1A ; VCE=5V
10
hFE-2
DC current gain
IC=6A ; VCE=5V
5
9
CC
Collector capacitance
VCB=10V;IE=0; f=1.0MHz
145
pF
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2527AF
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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