BU2527DX [NXP]
Silicon Diffused Power Transistor; 硅扩散型功率晶体管
| 型号： | BU2527DX |
| 厂家： | 
NXP |
| 描述： | Silicon Diffused Power Transistor |
| 文件： | 总7页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2527DX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic
full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved
RBSOA performance.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1500
800
12
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
-
A
ICM
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
30
A
Ptot
Ths ≤ 25 ˚C
-
45
W
V
VCEsat
ICsat
ts
IC = 8.0 A; IB = 1.6 A
f = 64 kHz
-
5.0
-
6.0
1.7
A
ICsat = 6.0 A; f = 64 kHz
2.0
µs
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
case
c
base
2
collector
emitter
b
3
Rbe
case isolated
1
2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1500
800
12
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
A
ICM
Collector current peak value
Base current (DC)
-
30
A
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
-
8
12
A
Base current peak value
Reverse base current
-
A
average over any 20 ms period
-
200
7
mA
A
Reverse base current peak value 1
Total power dissipation
Storage temperature
-
-
Ths ≤ 25 ˚C
45
W
˚C
˚C
-65
-
150
150
Junction temperature
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Rth j-hs
Rth j-hs
Rth j-a
Junction to heatsink
Junction to heatsink
Junction to ambient
without heatsink compound
with heatsink compound
in free air
-
-
3.7
2.8
-
K/W
K/W
K/W
35
1 Turn-off current.
September 1997
1
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2527DX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Visol
Cisol
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz
heatsink
-
22
-
pF
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICES
ICES
Collector cut-off current 2
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax
Tj = 125 ˚C
-
-
-
-
1.0
2.0
mA
mA
;
VCEOsust
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA;
L = 25 mH
800
-
-
V
IEBO
REB
Emitter cut-off current
VEB = 6.0 V; IC = 0 A
VEB = 6.0 V
IB = 600 mA
-
-
110
55
13.5
-
-
-
-
mA
Ω
Base-emitter resistance
Emitter-base breakdown voltage
BVEBO
VCEsat
VBEsat
hFE
7.5
-
V
Collector-emitter saturation voltage IC = 8.0 A; IB = 1.6 A
5.0
1.1
-
10
2.0
V
Base-emitter saturation voltage
DC current gain
IC = 8.0 A; IB = 1.6 A
IC = 1 A; VCE = 5 V
IC = 8 A; VCE = 5 V
IF = 8 A
-
-
5
-
-
V
11
7
hFE
VF
Diode forward voltage
1.6
V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Cc
Collector capacitance
IE = 0 A; VCB = 10 V; f = 1 MHz
145
-
pF
Switching times (64 kHz line
deflection circuit)
ICsat = 6.0 A; LC = 170 µH;
Cfb = 5.4 nF; IB(end) = 0.55 A;
LB = 0.6 µH; -VBB = 4 V;-IBM = 3.6 A
ts
tf
Turn-off storage time
Turn-off fall time
1.7
0.1
2.0
0.2
µs
µs
Vfr
tfr
Anti-parallel diode forward recovery IF = 8 A; dIF/dt = 50 A/µs
16
-
-
V
voltage
Anti-parallel diode forward recovery VF = 5 V
time
410
ns
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2527DX
ICsat
+ 150 v nominal
adjust for ICsat
TRANSISTOR
I
C
B
DIODE
t
t
Lc
I
I
end
B
D.U.T.
5 us
6.5 us
16 us
LB
IBend
-VBB
Cfb
V
Rbe
CE
t
Fig.1. Switching times waveforms.
Fig.4. Switching times test circuit.
VCC
ICsat
90 %
IC
LC
10 %
tf
t
VCL
IBend
ts
LB
IB
IBend
CFB
T.U.T.
Rbe
-VBB
t
- IBM
Fig.5. Test Circuit RBSOA. VCC = 140 V; -VBB = 4 V;
Fig.2. Switching times definitions.
LC = 100 - 200 µH; VCL ≤ 1500 V; LB = 3 µH;
CFB = 1 - 2.2 nF; IB(end) = 1 - 2 A
I
hFE
I
F
100
10
1
F
Tj = 25 C
Tj = 125 C
5 V
10%
time
t
fr
V
F
1V
V
5 V
fr
V
F
0.1
1
10
100
time
IC / A
Fig.3. Definition of anti-parallel diode Vfr and tfr
Fig.6. Typical DC current gain. hFE = f (IC)
parameter VCE
September 1997
3
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2527DX
VBESAT / V
VCESAT / V
1.2
1.1
1
10
Tj = 25 C
Tj = 25 C
Tj = 125 C
Tj = 125 C
0.9
0.8
0.7
0.6
0.5
0.4
8 A
1
6 A
IC/IB=
3
5 A
4
5
IC = 4 A
0.1
0.1
1
10
0.1
1
10
IC / A
IB / A
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB
Fig.10. Typical collector-emitter saturation voltage.
VCEsat = f (IB); parameter IC
Poff / W
VCESAT / V
100
10
1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
IC/IB =
5
4
3
IC =
6A
5A
Tj = 25 C
Tj = 125 C
1
100
0.1
10
0
0.2 0.4 0.6 0.8
1
IB / A
1.2 1.4 1.6 1.8
2
IC / A
Fig.8. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
Fig.11. Typical turn-off losses. Tj = 85˚C
Eoff = f (IB); parameter IC; f = 64 kHz
ts, tf / us
VBESAT / V
1.2
1.1
1
4
Tj = 25 C
Tj = 125 C
3.5
3
2.5
2
0.9
0.8
0.7
0.6
IC =
6A
IC=
8 A
1.5
1
5A
6 A
5 A
4 A
0.5
0
0
1
2
3
4
0
0.2 0.4 0.6 0.8
1
IB / A
1.2 1.4 1.6 1.8
2
IB / A
Fig.9. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
Fig.12. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 64 kHz
September 1997
4
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2527DX
Normalised Power Derating
PD%
120
IC / A
30
20
10
0
with heatsink compound
110
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
Ths /
100
120
140
0
500
1000
1500
C
VCE / V
Fig.13. Normalised power dissipation.
PD% = 100 PD/PD 25˚C = f (Ths)
Fig.15. Reverse bias safe operating area. Tj ≤ Tjmax
Zth / (K/W)
0.5
10
1
IC / A
100
tp =
= 0.01
ICM
0.2
0.1
0.05
40 us
0.1
ICDC
0.02
10
t
T
p
t
p
P
D =
D
0.01
0.001
100 us
t
D = 0
T
1E-06
1E-04
1E-02
t / s
1E+00
Ptot
Fig.14. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
1
1 ms
0.1
10 ms
DC
0.01
VCE / V
1000
1
10
100
Fig.16. Forward bias safe operating area. Ths = 25 ˚C
ICDC & ICM = f(VCE); ICM single pulse; parameter tp
Second-breakdown limits independant of temperature.
Mounted with heatsink compound.
September 1997
5
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2527DX
MECHANICAL DATA
Dimensions in mm
5.8 max
3.0
16.0 max
Net Mass: 5.88 g
0.7
4.5
3.3
10.0
27
max
25
25.1
25.7
22.5
max
5.1
2.2 max
4.5
18.1
min
1.1
0.4 M
2
3.3
0.95 max
5.45 5.45
Fig.17. SOT399; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
6
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2527DX
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997
7
Rev 1.200
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