BU306F [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | BU306F |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU306F/307F
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 300V(Min)- BD306F
400V(Min)- BD307F
·Collector Current-8A
APPLICATIONS
·Designed for use in switching regulators, inverters, motor
controls, solenoid/relay drivers and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
600
700
300
400
9
UNIT
BU306F
BU307F
BU306F
BU307F
VCBO
Collector-Base Voltage
V
VCEO
Collector-Emitter Voltage
Emitter-Base Voltage
V
VEBO
IC
ICM
IB
V
A
Collector Current-Continuous
Collector Current-Peak
Base Current
8
16
A
4
A
IBM
PC
TJ
Base Current-Peak
8
A
Collector Power Dissipation
@ TC=25℃
20
W
℃
℃
Junction Temperature
150
-65~150
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance, Junction to Case
6.12
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU306F/307F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
IC= 0.1A ;IB= 0; L=25mH
IC= 2A; IB= 0.4A
MIN TYP. MAX UNIT
BU306F
BU307F
300
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V
400
VCE(sat)-1
VCE(sat)-2
VCE(sat)-3
VBE(sat)-1
VBE(sat)-2
ICES
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
1.0
V
V
IC= 5A; IB= 1A
IC= 5A; IB= 1A; TJ= 100℃
1.5
2.0
IC= 8A; IB= 2A
3.0
1.2
V
IC= 2A; IB= 0.4A
V
IC= 5A; IB= 1A
IC= 5A; IB= 1A; TJ= 100℃
1.6
1.5
V
VCE= VCESmax;VBE= -1.5V
VCE= VCESmax;VBE= -1.5V;TJ= 100℃
1
5
mA
mA
IEBO
Emitter Cutoff Current
VEB= 9V; IC=0
1
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 5V
IC= 2A ; VCE= 5V
15
8
50
40
30
hFE-2
DC Current Gain
hFE-3
DC Current Gain
IC= 5A ; VCE= 5V
6
COB
Output Capacitance
IE= 0 ; VCB= 10V
80
4
pF
fT
Current-Gain—Bandwidth Product
MHz
IC= 0.5A ; VCE= 10V, ftest= 1.0MHz
Switching Times ; Resistive Load
td
tr
Delay Time
Rise Time
Storage Time
Fall Time
0.1
1.0
μs
μs
μs
μs
IC= 5A; IB1= -IB2= 1A;
VCC= 125V; tp= 25μs
3.0
ts
tf
0.7
2
isc Website：www.iscsemi.cn
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