BU603 [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | BU603 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU603
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 550V(Min)
·High Switching Speed
APPLICATIONS
·Designed for use in power supplies and deflection circuits
for color receivers and monitors
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCES
VCEO
VEBO
IC
PARAMETER
Collector-Emitter Voltage-VBE= 0
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
1350
550
V
6
V
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
5
A
ICM
8
A
IB
2
4
A
IBM
A
IE
Emitter Current-Continuous
Emitter Current-Peak
7
A
IEM
12
A
Collector Power Dissipation
TC=25℃
PC
100
150
-65~150
W
℃
℃
Tj
Junction Temperature
Storage Ttemperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
1.25
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU603
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
VCEO(SUS)
IC= 100mA; IB= 0
550
V
IC= 2A; IB= 0.33A
IC= 4A; IB= 1.33A
2
3
V
V
VCE
VCE
(sat)-1
(sat)-2
V
CE= VCESmax; VBE= 0
VCE= VCESmax; VBE= 0;TJ= 125℃
1
2
ICES
mA
mA
IEBO
hFE-1
hFE-2
hFE-3
hFE-4
VEB= 6V; IC= 0
1
DC Current Gain
IC= 10mA ; VCE= 5V
IC= 1A ; VCE= 5V
IC= 2A ; VCE= 2V
IC= 4A ; VCE= 3V
6
8
6
3
DC Current Gain
DC Current Gain
DC Current Gain
Switching Times; Resistive Load
Turn-On Time
Storage Time
Fall Time
0.5
6.0
0.7
μs
μs
μs
ton
IC= 2A; IB1= -IB2= 0.33A
ts
tf
isc Website：www.iscsemi.cn
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