BU921 [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | BU921 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU921
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 400V(Min)
APPLICATIONS
·Designed for automotive ignition applications and inverter
circuits for motor control.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
VCES
VCEO
VEBO
IC
PARAMETER
Collector-Emitter Voltage VBE= 0
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
VALUE
450
400
5
UNIT
V
V
V
10
A
ICM
Collector Current-peak
Base Current
15
A
IB
5
A
Collector Power Dissipation
@TC=25℃
PC
105
150
-65~150
W
℃
℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance, Junction to Case
1.2
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU921
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
VCEO(SUS)
Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0
400
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
IC= 5A; IB= 50mA
IC= 7A; IB= 140mA
IC= 5A; IB= 50mA
IC= 7A; IB= 140mA
1.8
1.8
2.2
2.5
V
VCE
(sat)-1
V
V CE
(sat)-2
(sat)-1
V
VBE
V
V BE
(sat)-2
VCE= 450V;VBE= 0
VCE= 450V;VBE= 0;Tj= 150℃
0.25
0.5
ICES
mA
mA
mA
V
ICEO
IEBO
VECF
Collector Cutoff Current
VCE= 400V; IB= 0
VEB= 5V; IC= 0
IF= 7A
0.25
50
Emitter Cutoff Current
C-E Diode Forward Voltage
2.5
isc Website：www.iscsemi.cn
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