BUT18A [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BUT18A |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUT18 BUT18A
DESCRIPTION
·
·With TO-220C package
·High voltage ,high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings (Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
850
1000
400
450
9
UNIT
BUT18
VCBO
Collector-base voltage
Open emitter
V
BUT18A
BUT18
VCEO
Collector-emitter oltage
Open base
V
BUT18A
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Open collector
V
A
6
Collector current-peak
Base current
12
A
3
A
IBM
Ptot
Tj
Base current-peak
Total power dissipation
Junction temperature
Storage temperature
6
A
TC=25℃
110
150
-65~150
W
℃
℃
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUT18 BUT18A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
400
450
TYP.
MAX
UNIT
BUT18
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.1A; IB=0;L=25mH
V
BUT18A
VCEsat
Collector-emitter saturation voltage IC=4A; IB=0.8A
1.5
1.3
V
V
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.8A
VCE=850V ;VBE=0
Tj=125℃
1.0
2.0
BUT18
Collector
cut-off current
ICES
mA
mA
VCE=1000V ;VBE=0
Tj=125℃
1.0
2.0
BUT18A
IEBO
hFE-1
hFE-2
Emitter cut-off current
DC current gain
VEB=9V; IC=0
10
35
IC=5mA ; VCE=5V
IC=1A ; VCE=5V
10
10
DC rrent gain
Switching times resistive load
ton
Turn-on time
Storage time
Fall time
1.0
4.0
0.8
μs
μs
μs
IC=4A; IB1=-IB2=0.8A
VCC=250V
ts
tf
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUT18 BUT18A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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