首页 |元器件品牌

BUW13F [ISC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
BUW13F
型号： BUW13F
厂家： INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管
文件： 总3页 (文件大小：125K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BUW13F BUW13AF  
DESCRIPTION  
·With TO-3PFa package  
·High voltage;high speed  
APPLICATIONS  
·Converters  
·Inverters  
·Switching regulators  
·Motor control systems  
PINNING (See Fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
3
l
Absolute maximum ratings(Ta=25℃)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
850  
1000  
400  
450  
9
UNIT  
BUW13F  
BUW13AF  
BUW13F  
BUW13AF  
VCBO  
Collector-base voltage  
Open emitter  
Open base  
V
VCEO  
Collector-emitter voltage  
V
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
V
A
15  
Collector current-peak  
Base current  
30  
A
6
A
IBM  
PT  
Base current-peak  
Total power dissipation  
Junction temperature  
Storage temperature  
9
A
TC=25℃  
50  
W
℃
℃
Tj  
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Rth j-a  
Thermal resistance from junction to ambient  
35  
K/W  
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BUW13F BUW13AF  
CHARACTERISTICS  
Tj=25℃ unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
IC=0.1A ; IB=0; L=25mH  
IC=10A; IB=2A  
MIN  
400  
450  
TYP.  
MAX  
UNIT  
BUW13F  
BUW13AF  
BUW13F  
Collector-emitter  
sustaining voltage  
VCEO(SUS)  
V
Collector-emitter  
saturation voltage  
VCEsat  
1.5  
1.6  
V
V
BUW13AF IC=8A; IB=1.6A  
BUW13F  
IC=10A; IB=2A  
Base-emitter  
saturation voltage  
VBEsat  
BUW13AF IC=8A; IB=1.6A  
VCE=Rated VCES; VBE=0  
Tj=125℃  
1.0  
4.0  
ICES  
Collector cut-off current  
Emitter cut-off current  
Dcurrent gain  
mA  
mA  
IEBO  
VEB=9V; IC=0  
10  
35  
35  
hFE-1  
IC=20mA ; VCE=5V  
IC=1.5A ; VCE=5V  
10  
10  
hFE-2  
DC current gain  
Switching times resistive load  
ton  
Turn-on time  
Storage time  
Fall time  
1.0  
4.0  
0.8  
μs  
μs  
μs  
For BUW13F  
IC=10A ;IB1=-IB2=-2A  
ts  
For BUW13AF  
IC=8A ;IB1=-IB2=-1.6A  
tf  
2
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BUW13F BUW13AF  
PACKAGE OUTLINE  
Fig.2 Outline dimensions(unindicated tolerance:±0.30mm)  
3

相关型号：

BUW13W

 Silicon diffused power transistors
NXP

BUW13W

 Silicon NPN Power Transistors
SAVANTIC

BUW13W

 Silicon NPN Power Transistors
ISC

BUW14

 Silicon Diffused Power Transistor
NXP

BUW144-0528-12AA95

 IC Socket, BGA144, 144 Contact(s), ROHS COMPLIANT
ACTEL

BUW144-0528-12AA95L

 IC Socket, BGA144, 144 Contact(s), ROHS COMPLIANT
ACTEL

BUW144-0729-12AA95

 IC Socket, BGA144, 144 Contact(s), ROHS COMPLIANT
ACTEL

BUW144-0730-12AA95

 IC Socket, BGA144, 144 Contact(s), ROHS COMPLIANT
ACTEL

BUW144-0828-12AA95L

 IC Socket, BGA144, 144 Contact(s), ROHS COMPLIANT
ACTEL

BUW144-0829-12AA95L

 IC Socket, BGA144, 144 Contact(s), ROHS COMPLIANT
ACTEL

BUW144-1028-12AA95

 IC Socket, BGA144, 144 Contact(s), ROHS COMPLIANT
ACTEL

BUW144-1029-12AA95

 IC Socket, BGA144, 144 Contact(s), ROHS COMPLIANT
ACTEL
©2020 ICPDF网 联系我们和版权申明