D44VH [ISC]

isc Silicon NPN Power Transistors; ISC的硅NPN功率晶体管


型号：	D44VH
厂家：	INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：	isc Silicon NPN Power Transistors ISC的硅NPN功率晶体管晶体晶体管
文件：	总2页 (文件大小：119K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

D44VH Series

DESCRIPTION

·Low Saturation Voltage

·Fast Switching Speed

·Complement to Type D45VH Series

APPLICATIONS

·Designed for high-speed switching applications, such as

switching regulators and high frequency inverters. They are

also well-suited for drivers for high power switching circuits.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

D44VH 1

D44VH 4

D44VH 7

D44VH 10

D44VH 1

D44VH 4

D44VH 7

D44VH 10

Collector-Emitter

V_CEV

Voltage

100

Collector-Emitter

Voltage

V_CEO

V_EBO

I_C

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

I_CM

P_C

Collector Power Dissipation

@T_C=25℃

℃

T_j

Junction Temperature

150

-55~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

℃/W

Thermal Resistance, Junction to Case

1.5

R_{th j-c}

Thermal Resistance,Junction to Ambient

62.5

R_{th j-a}

isc Website：www.iscsemi.cn

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

D44VH Series

ELECTRICAL CHARACTERISTICS

T_C=25℃ unless otherwise specified

SYMBOL

PARAMETER

D44VH 1

CONDITIONS

MIN

TYP. MAX UNIT

D44VH 4

D44VH 7

D44VH 10

Collector-Emitter

Sustaining Voltage

V_CEO(SUS)

I_C= 25mA ;I_B= 0

Collector-Emitter Saturation Voltage I_C= 8A ;I_B= 0.4A

0.4

0.8

V_CE

(sat)-1

(sat)-2

Collector-Emitter Saturation Voltage I_C= 15A ;I_B= 3A;T_C=100℃

I_C= 8A ;I_B= 0.4A

Base-Emitter Saturation Voltage

1.2

1.1

V_BE

(sat)

I_C= 8A ;I_B= 0.4A;T_C=100℃

V_CE=RatedV_CE;V_{BE( )}=4V

100

off

I_CEV

Collector Cutoff Current

μA

_CE=RatedV_CE;V_{BE( )}=4V;T_C=100℃

off

I_EBO

h_FE-1

h_FE-2

C_OB

f_T

Emitter Cutoff Current

DC Current Gain

V_EB= 7V; I_C= 0

I_C= 2A ; V_CE= 1V

DC Current Gain

I_C= 4A ; V_CE= 1V

Output Capacitance

120

I_E= 0;V_CB= 10V,f_test= 1.0MHz

I_C= 0.1A;V_CE= 10V;f_test= 20MHz

Current-Gain—Bandwidth Product

MHz

Switching Times

Delay Time

250

700

t_d

t_r

Rise Time

Storage Time

Fall Time

I_C= 8A; I_B1= -I_B2= 0.8A

V_CC= 20V

t_s

t_f

isc Website：www.iscsemi.cn

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