IIPW60R199CP [ISC]

N-Channel MOSFET Transistor;
IIPW60R199CP
型号: IIPW60R199CP
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

N-Channel MOSFET Transistor

文件: 总2页 (文件大小:335K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
INCHANGE Semiconductor  
isc N-Channel MOSFET Transistor  
IPW60R070CFD7  
IIPW60R070CFD7  
·FEATURES  
·Static drain-source on-resistance:  
RDS(on)70m  
·Enhancement mode:  
·100% avalanche tested  
·Minimum Lot-to-Lot variations for robust device  
performance and reliable operation  
·DESCRITION  
·Fast switching  
·ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VDSS  
VGS  
ID  
PARAMETER  
VALUE  
600  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
±20  
31  
V
Drain Current-Continuous  
Drain Current-Single Pulsed  
Total Dissipation @TC=25℃  
Max. Operating Junction Temperature  
Storage Temperature  
A
IDM  
129  
A
PD  
156  
W
150  
Tj  
-55~150  
Tstg  
·THERMAL CHARACTERISTICS  
SYMBOL  
Rth(j-c)  
PARAMETER  
MAX  
UNIT  
Channel-to-case thermal resistance  
/W  
/W  
0.8  
62  
Channel-to-ambient thermal resistance  
Rth(j-a)  
1
isc websitewww.iscsemi.cn  
isc & iscsemi is registered trademark  
INCHANGE Semiconductor  
isc N-Channel MOSFET Transistor  
IPW60R070CFD7  
IIPW60R070CFD7  
ELECTRICAL CHARACTERISTICS  
TC=25unless otherwise specified  
SYMBOL  
BVDSS  
VGS(th)  
RDS(on)  
IGSS  
PARAMETER  
CONDITIONS  
MIN  
600  
3.5  
TYP  
MAX  
UNIT  
V
Drain-Source Breakdown Voltage VGS=0V; ID=1mA  
Gate Threshold Voltage  
4.5  
70  
0.1  
1
V
VDS=VGS; ID=0.76mA  
VGS=10V; ID=15.1A  
VGS= 20V; VDS=0V  
VDS=600V; VGS= 0V  
IF=15.1A, VGS = 0V  
Drain-Source On-Resistance  
Gate-Source Leakage Current  
Drain-Source Leakage Current  
Diode forward voltage  
mΩ  
μA  
μA  
V
IDSS  
VSD  
2
isc websitewww.iscsemi.cn  
isc & iscsemi is registered trademark  

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