IPP60R120C7 [ISC]
N-Channel MOSFET Transistor;
| 型号： | IPP60R120C7 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | N-Channel MOSFET Transistor |
| 文件： | 总2页 (文件大小：338K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
IPP60R280P6，IIPP60R280P6
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.28Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Provide all benefits of a fast switching super junction MOS while not
sacrificing ease of use
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VDSS
VGS
ID
PARAMETER
VALUE
600
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±20
13.8
V
Drain Current-Continuous
Drain Current-Single Pulsed
Total Dissipation @TC=25℃
Max. Operating Junction Temperature
Storage Temperature
A
IDM
39
A
PD
104
W
℃
℃
150
Tj
-55~150
Tstg
·THERMAL CHARACTERISTICS
SYMBOL
Rth(ch-c)
Rth(ch-a)
PARAMETER
MAX
UNIT
Channel-to-case thermal resistance
℃/W
℃/W
1.2
62
Channel-to-ambient thermal resistance
1
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
IPP60R280P6，IIPP60R280P6
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
BVDSS
VGS(th)
RDS(on)
IGSS
PARAMETER
CONDITIONS
MIN
600
3.5
TYP
MAX
UNIT
V
Drain-Source Breakdown Voltage VGS=0V; ID =1mA
Gate Threshold Voltage
VDS=VGS; ID =0.43mA
VGS=10V; ID=5.2A
VGS=20V; VDS=0V
VDS=600V; VGS= 0V
IF=6.5A; VGS = 0V
4.5
0.28
0.1
1
V
Drain-Source On-Resistance
Gate-Source Leakage Current
Drain-Source Leakage Current
Diode forward voltage
Ω
μA
μA
V
IDSS
VSD
0.9
2
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
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